2011
DOI: 10.1109/jssc.2010.2085870
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A Range Image Sensor Based on 10-$\mu{\hbox {m}}$ Lock-In Pixels in 0.18-$\mu$m CMOS Imaging Technology

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Cited by 94 publications
(45 citation statements)
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“…The techniques used to implement I-TOF cameras differ from the light modulation point of view, with continuous wave (CW) modulation or pulsed light, but also from the device implementation, from a conventional photodiode with complex processing electronics [2,3], to CCD-like photodiode for electrical demodulation [4], photogate structures on CMOS field-oxide [5], ohmic junctions for minority carriers demixing [6], single-photon avalanche diodes in integrating (counting) operation [7] and buried channel photodemodulator [8].…”
Section: Open Accessmentioning
confidence: 99%
See 1 more Smart Citation
“…The techniques used to implement I-TOF cameras differ from the light modulation point of view, with continuous wave (CW) modulation or pulsed light, but also from the device implementation, from a conventional photodiode with complex processing electronics [2,3], to CCD-like photodiode for electrical demodulation [4], photogate structures on CMOS field-oxide [5], ohmic junctions for minority carriers demixing [6], single-photon avalanche diodes in integrating (counting) operation [7] and buried channel photodemodulator [8].…”
Section: Open Accessmentioning
confidence: 99%
“…Moreover, the illuminator power is pulsed and accumulated N times in a frame, with a requirement of minimum duty-cycle given by the laser specifications: therefore, the number of accumulations is the equivalent of the exposure time and determines also the 3D frame rate which can be achieved with this sensor. Table 1 summarizes the main parameters which can be used to analytically calculate some of the presented figures of merit using Equations (7) and (8). The calculations, for the different frame rate values, give a PR corr from 20.1 to 39.5 V/(W/m 2 ) and a NED from 1.2 and 3.3 cm/√Hz, whereas the measurements give PR corr from 16.7 to 31.3 V/(W/m 2 ) and a NED from 1.4 to 3.4 cm/√Hz.…”
Section: Evaluation Of 3d Sensor Based On Pulsed Techniquementioning
confidence: 99%
“…Time-resolved (TR) CMOS imagers have recently been paid much attention in applications of time-of-flight range imaging [1,2,3,4], biological imaging [5,6,7], and so on. A state-of-the-art TOF range imager [4] has demonstrated the high range resolution of 0.3 mm, which corresponds to time resolution of 2 ps.…”
Section: Introductionmentioning
confidence: 99%
“…Column signal lines are separate for color and range pixels. ADC and ToF signal processing is performed off-chip.Each Z pixel is a pinned photodiode with two transfer gates and two output ports [4,5]. For ranging, the scene is illuminated with 850nm NIR LEDs modulated at 20MHz.…”
mentioning
confidence: 99%
“…Each Z pixel is a pinned photodiode with two transfer gates and two output ports [4,5]. For ranging, the scene is illuminated with 850nm NIR LEDs modulated at 20MHz.…”
mentioning
confidence: 99%