We have shown that the electronic
structure of graphene oxide is
strongly, but reversibly, affected by temperature. Below 160 K, graphene
oxide is much more completely oxidized, removing any last remaining
π-conjugated network. Through DFT simulations, we have shown
that this is due to buckling-induced oxidation. As temperature is
reduced, the lightly oxidized, graphene-like zones attempt to expand
due to a negative thermal expansion coefficient (TEC), but the heavily
oxidized zones, with a TEC that is near zero, prevent this from happening.
This contributes to localized buckling. The deformed regions oxidize
much more readily, and the 1,2-epoxide groups form a new type of functional
group never before seen: a triply bonded oxygen, bonded at the 1,3,5
sites of the hexagonal carbon rings. We have called this group TB-epoxide.
Stable only under buckling, the TB-epoxide groups revert back to 1,2-epoxides
once the lattice relaxes to a flatter profile. We have shown that
one can alter the electronic structure of graphene oxide to induce
temporary, but more complete, oxidation via strain.