A re-examination of experimental evidence on the spectral dependence of the optical transition matrix element associated with thin-film silicon

Minar, S; Moghaddam, Saeed; O’Leary, Stephen K.

doi:10.1007/s10854-019-01336-7

Cited by 1 publication

(1 citation statement)

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“…𝐸 𝑇𝑎𝑢𝑐 , the Tauc optical gap and 𝐵 𝑇𝑎𝑢𝑐 is a pre-factor. A more appropriate model to a-Si:H thin films, cody et al 22 adopted Tauc model but with a slight modification, that is the constant dipole matrix element assumption 23 instead of the constant momentum matrix element of Tauc, thus the Cody expression is given by: 𝛼 𝐸 = 𝐵 𝐶𝑜𝑑𝑦 ⁄ (𝐸 − 𝐸 𝐶𝑜𝑑𝑦 ) 2 ………2 Where 𝐸 𝐶𝑜𝑑𝑦 is the Cody model optical gap, and 𝐵 𝐶𝑜𝑑𝑦 is a pre-factor. As Tauc and Cody models do not take into account optical transitions due to tail states, they tend to underestimate the energy gap proposed by their models 24 .…”

Section: Theoretical Backgroundmentioning

confidence: 99%

A Study of a-Si:H Absorption Edge Using Dunstan’s Model

Sahal

Al-Numan

2023

Baghdad Sci.J

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The optical absorption data of Hydrogenated Amorphous Silicon was analyzed using a Dunstan model of optical absorption in amorphous semiconductors. This model introduces disorder into the bandband absorption through a linear exponential distribution of local energy gaps, and it accounts for both the Urbach and Tauc regions of the optical absorption edge.Compared to other models of similar bases, such as the O'Leary and Guerra models, it is simpler to understand mathematically and has a physical meaning. The optical absorption data of Jackson et al and Maurer et al were successfully interpreted using Dunstan's model. Useful physical parameters are extracted especially the band to the band energy gap 𝐸 °, which is the energy gap in the absence of disorder, that can be interpreted as the mobility gap of the material.

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Section: Theoretical Backgroundmentioning

confidence: 99%