A Reactive and On-Chip Sensor Circuit for NBTI and PBTI Resilient SRAM Design

Abstract

Process Variation (PV), Bias Temperature Instability (BTI) and Time-Dependent Dielectric Breakdown (TDDB) are the critical factors that affect the reliability of semiconductor chip design. They cause the system to be unstable and increase the soft error rate. In this paper, a compact on-chip degradation technique using runtime leakage current monitoring has been proposed. The proposed sensor-based adaptive technique compensates for the variation due to PV and aging using the body-bias-voltage-generator circuit. Simulation experiments for three and ten-year stress have been performed. Simulation results proved the superiority of the proposed sensor which provides 33% (up to 0.75 V) more output voltage and 98% sensitivity at 1 V supply voltage compared to the state-of-the-art sensor. The proposed technique mitigates up to 80% PV and BTI effects in SRAM compared to the state-of-the-art techniques.

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

“…The changes obtained via applying negative voltage are denoted as NBTI, while changes obtained by applying positive voltage are denoted as PBTI (positive bias temperature instabilities). Moreover, from previous research and the literature [22,[24][25][26], it is known that larger changes occur at higher voltages, hence the results at −45 V are shown in this figure, too. An experiment involving stress at +45 V was not of interest.…”

“…The changes obtained via applying negative voltage are denoted as NBTI, while changes obtained by applying positive voltage are denoted as PBTI (positive bias temperature instabilities). Moreover, from previous research and the literature [22,[24][25][26], it is Regarding the fact that both NMOS and PMOS transistors were stressed, the results were obtained under both positive and negative gate voltages of 40 V, as presented in Figure 4. The changes obtained via applying negative voltage are denoted as NBTI, while changes obtained by applying positive voltage are denoted as PBTI (positive bias temperature instabilities).…”

In-Vehicle Networking/Autonomous Vehicle Security for Internet of Things/Vehicles

“…In "A Reactive and On-Chip Sensor Circuit for NBTI (Negative Bias Temperature Instability) and PBTI (Positive Bias Temperature Instability) Resilient SRAM (Static Random-Access Memory) Design" [9], Nandakishor Yadav et al take on the issue of Sensor Circuit for NBTI and PBTI Resilient SRAM Design for an autonomous vehicle. Process Variation (PV), Bias Temperature Instability (BTI), and Time-Dependent Dielectric Breakdown (TDDB) are critical factors that affect the reliability of semiconductor chip design.…”