A real space investigation of the dimer defect structure of Si(001)‐(2times8)

Niehus, Horst; Köhler, Ulrich; Copel, M.; Demuth, J. E.

doi:10.1111/j.1365-2818.1988.tb01444.x

Cited by 123 publications

(43 citation statements)

References 13 publications

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“…A classic example is the case of Ni on Si͑001͒, in which concentrations of as little as 5% create arrays of line vacancies. 22,23 We observe an unusual structure on this surface that does not appear to have been noted in the past. Two examples are highlighted with arrows in Fig.…”

Section: Report Documentation Pagementioning

confidence: 67%

Hydrogen termination following Cu deposition on Si(001)

2005

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We describe the surface structures following submonolayer Cu deposition on Si͑001͒ and subsequent hydrogen termination as characterized by scanning tunneling microscopy. Cu adsorption at 870 K results in a characteristic ͑2 ϫ 8͒ island+ vacancy structure, as previously reported. In addition, occasional structures are observed attributed to Cu in surface interstitial sites. After H termination, the dominant features of the island+ vacancy structure remain, but the size and distribution of the structures are significantly altered. Based on the atomic-scale appearance of both the clean and H-terminated structures, we propose that within the ͑2 ϫ 8͒ island+ vacancy structure all surface atoms are Si, with all Cu subsurface, contrary to previous structural models.

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Section: Report Documentation Pagementioning

confidence: 67%

Hydrogen termination following Cu deposition on Si(001)

2005

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“…4. It has been reported by several researchers that Ni impurities induce the 2×n structure [44,46,48,52]. It is noted that such Ni contamination also occurs on the Si(111) surface, leading to the √ 19 × √ 19 structure [89,101].…”

Section: B 2 × N Reconstructionmentioning

confidence: 99%

“…In the first stage carbonization of a Si(100) surface, 2 × n (6 ≤ n ≤ 12) [27,28] and c(4 × 4) [27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] reconstructions have been reported. However, similar 2 × n [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58] and c(4 × 4) reconstructions have been reported without carbonization. It is noteworthy that X-ray photoelectron diffraction (XPD) studies [5,26,[36][37][38][39][40] have indicated an absence of carbon atoms on the outermost layer of the c(4 × 4) surface induced by carbon.…”

Section: Introductionmentioning

confidence: 99%

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Takami¹,

Kusaka

Kusunoki

2006

e-J. Surf. Sci. Nanotech.

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The initial stage of the structural change in a clean Si(100)-2 × 1 surface induced by annealing at 640• C and exposure to ethylene gas was studied by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The RHEED pattern included SiC spots and STM images revealed SiC particles on the surface, which confirmed the carbonization of the Si surface. At a different area of the same sample, the RHEED pattern showed both twice the periodicity of surface spots which indicates a flat surface region and transmitted bulk Si spots which indicates the initial stage of voids. The STM images of the flat region showed a 2 × n (6 ≤ n ≤ 12) reconstruction. The topography of the 2 × n STM image depended on the bias voltage. The 2 × n reconstruction was clearly induced by carbon impurities; STM images were similar to those in previous studies in which structures were formed by various kinds of impurities or contaminations.

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“…), or metal contamination [14][15][16][17][18] (Ni, Cu, Co, Ag, etc.). For sufficiently high temperatures those missing dimers order into vacancy islands.…”

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confidence: 99%

Surface Stress Anisotropy of Ge(001)

2002

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By analyzing the equilibrium shape of vacancy islands on the Ge(001) surface we have determined the surface stress anisotropy, i.e., the difference between the compressive stress component along the substrate dimer rows and the tensile stress component perpendicular to the substrate dimer rows. In order to extract the surface stress anisotropy we have used a model recently put forward by Li et al. [Phys. Rev. Lett. 85, 1922]. The surface stress anisotropy of the clean Ge(001) surface is found to be 80 6 30 meV͞Å 2 . This value is comparable to the surface stress anisotropy of the closely related Si(001) surface. DOI: 10.1103/PhysRevLett.88.196105 PACS numbers: 68.35.Md, 68.37.Ef Among the most intriguing and frequently studied surfaces belong to the semiconductor group-IV (001) surfaces [1,2]. Because of its technological importance, the majority of studies have been devoted to the Si(001) surface rather than to the closely related Ge(001) surface. In many aspects the Ge(001) surface is very similar to the Si(001) surface. Both surfaces reconstruct to form rows of dimerized atoms, yielding a ͑2 3 1͒ surface unit mesh. The surface dimers can buckle with respect to the surface plane leading to higher-order reconstructions, such as c͑4 3 2͒ and p͑2 3 2͒. The dimerization of these surfaces in the ͑2 3 1͒, p͑2 3 2͒, or c͑4 3 2͒ reconstruction induces an anisotropic surface stress tensor: the surface is under a compressive stress along the substrate dimer row direction and under a tensile stress in a direction perpendicular to the substrate dimer rows. If the surface exhibits a slight miscut with respect to the [001] direction, single layer steps are found. The monatomic steps separate terraces with alternating ͑2 3 1͒ and ͑1 3 2͒ reconstruction. After cleaning, Ge(001) exhibits a well-ordered domain pattern consisting of ͑2 3 1͒ and c͑4 3 2͒ stripes and almost no missing dimer defects [3].The missing dimer concentration on Si(001) can be increased by ion bombardment with noble gases [4][5][6][7][8], etching [9 -13] (O 2 , H 2 , Br 2 , I 2 , etc.), or metal contamination [14-18] (Ni, Cu, Co, Ag, etc.). For sufficiently high temperatures those missing dimers order into vacancy islands. The equilibrium shape at low vacancy concentrations (,0.2 0.3 monolayers) [19] of these vacancy islands is elongated in a direction perpendicular to the substrate dimer rows. At vacancy concentrations above 0.2 0.3 monolayers the vacancy islands rotate shape and are aligned parallel to the substrate dimer rows [8]. The absence of dimerization at the bottom of the narrow vacancy islands in combination with the specific rebonding at the island edges is believed to be responsible for this shape transformation [19][20][21][22][23][24]. Ab initio calculations [20] and tight-binding total-energy calculations [21] are in perfect agreement with the experimental observations of the shape transformation. Such a shape transformation has not been observed for the Ge(001) surface. Experiments performed on Ge(001) so far have revealed that the bo...

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A real space investigation of the dimer defect structure of Si(001)‐(2times8)

Cited by 123 publications

References 13 publications

Hydrogen termination following Cu deposition on Si(001)

Hydrogen termination following Cu deposition on Si(001)

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Surface Stress Anisotropy of Ge(001)

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