A Reconfigurable <i>S</i>-/<i>X</i>-Band GaN MMIC Power Amplifier

Kang, Li; Chen, Wenhua; Wu, Aimin

doi:10.1109/lmwc.2022.3141230

Cited by 11 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In GaN technology however the development of reconfigurable PAs is hindered by process limitations, mainly the lack of compact and high-speed switches. We briefly review some preliminary developments in reconfigurable GaN PAs [72], [73], [74].…”

Section: E Reconfigurable Pasmentioning

confidence: 99%

“…The PA is implemented in a 250-nm GaN-on-SiC process, operates at 4.8 GHz, provides 2 W maximum power, and through configuring the operation mode can achieve 60% enhancement in the back-off efficiency and 6 dB improvement of the adjacent channel leakage ratio (ACLR). A reconfigurable PA is proposed in [74], which comprises a dual-band output matching network and reconfigurable interstage and input matching networks. The PA can be operated in one of the two modes: 2-3 GHz or 10-12 GHz.…”

Section: E Reconfigurable Pasmentioning

confidence: 99%

See 1 more Smart Citation

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

Nikandish

2023

IEEE J. Microw.

View full text Add to dashboard Cite

GaN integrated circuit technologies have dramatically progressed over the recent years. The prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output power densities, has created a paradigm shift in the established and emerging high-power applications. In this article, we present a review on the developments and prospects of GaN integrated circuit power amplifiers (PAs). The progress of GaN transistors including improvements in their important features, i.e., supply voltage, substrate material, transistor scaling approach, and device modeling are elaborated and the current state-of-the-art processes with 20-nm gate length, 450 GHz cut-off frequency, and over 600 V supply voltage are discussed. We also investigate developments in the GaN integrated circuit PA architectures and their implementation challenges including the reactive matching PAs capable of delivering over 100 W output power and operating up to 200 GHz, PA linearity, back-off efficiency enhancement, reconfigurable PAs, and distributed PA architectures. Finally, we discuss the prospects of GaN technology and possible future improvements, in transistor and circuit levels, which can advance performance and functionality of GaN integrated circuits.INDEX TERMS Distributed amplifier, Doherty power amplifier, Gallium Nitride (GaN), high-electron mobility transistor (HEMT), integrated circuit, mm-Wave, monolithic microwave integrated circuit (MMIC), MTT 70th Anniversary Special Issue, power amplifier (PA).This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.REZA NIKANDISH (Senior Member, IEEE) received the Ph.D. degree in electrical engineering

show abstract

Section: E Reconfigurable Pasmentioning

confidence: 99%

Section: E Reconfigurable Pasmentioning

confidence: 99%

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

Nikandish

2023

IEEE J. Microw.

View full text Add to dashboard Cite

show abstract

“…Obviously, transformer matching topology enables a more compact layout of the circuit. Table 3 presents a comprehensive performance comparison of related researches, [28][29][30][31][32] to this work designed transformer matching MMIC PA and a comparison of the latest works of other published PA over the X-band. Obviously, transformer matching topology enables a more compact layout of the circuit.…”

Section: Transformer Matching Based Power Amplifier Design On Ganmentioning

confidence: 99%

Coplanar Asymmetry Transformer Distributed Modeling for X-Band Drive Power Amplifier Design on GaN Process

et al. 2022

View full text Add to dashboard Cite

In this paper, a methodology for designing a distributed model for coplanar asymmetry transformer on gallium nitride (GaN) process is proposed, which can accurately characterize the transformer’s feature up to a millimeter-wave band. The paper analyses a transformer-based matching circuit and proposes a practical transformer design procedure. A two stage, transformer matching based X-band power amplifier (PA) is reported here. Using the proposed transformer model and correlated transformer design procedure can sharply reduce schematic design period and optimum process time. The PA chip is designed on a 0.25 µm GaN technology process and occupies a 1.515 mm2 area. At a 28 V supply, the gain and output power of the PA reaches 15 dB and 29 dBm respectively, and the wideband matching transformer reaches 47.6% bandwidth. To the best of our knowledge, the distributed model for coplanar asymmetry transformer and transformer-based X-band MMIC PA on GaN process in this work is the first case among the reported papers.

show abstract

A Compact Dual-Band Output Matching Network with Adjustable Transmission Zeros for High-Efficiency Power Amplifier

Wei,

Liu,

et al. 2024

2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

View full text Add to dashboard Cite

A Reconfigurable S-/X-Band GaN MMIC Power Amplifier

Cited by 11 publications

References 7 publications

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

Coplanar Asymmetry Transformer Distributed Modeling for X-Band Drive Power Amplifier Design on GaN Process

A Compact Dual-Band Output Matching Network with Adjustable Transmission Zeros for High-Efficiency Power Amplifier

Contact Info

Product

Resources

About