A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ ion beam sputtering

Nonalloyed Ti/Pt/Au contacts to heavily doped p-GaAs have been fabricated using effective cleaning of the semiconductor surface by bombardment with low energy Ar+ ions (60 eV) prior to the metal deposition. Short-time annealing cycles for 1 and 20 s were employed in order to restore the primary properties of the subsurface layer disordered during ion bombardment. Annealing at temperatures ranging from 420 to 530 °C provides formation of contacts with an extremely low resistivity of 2.8×10−8 Ω cm2. A definite correlation between electrical properties and structural modifications of the contact interface was found. Measurements of the contact resistivity at different ambient temperatures yielded a good quantitative agreement with the theoretically predicted values using the field-emission model. The results indicate that the metal-semiconductor junctions formed under optimal conditions are intimate and that tunneling is the dominant mechanism of the current flow.

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A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ ion beam sputtering

Cited by 8 publications

References 7 publications

Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors

Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors

Metal contacts to gallium nitride

Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs

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