Metal contacts to gallium nitride

Foresi, James; Moustakas, T. D.

doi:10.1063/1.109207

Cited by 332 publications

(172 citation statements)

References 13 publications

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“…Kurtin et al [32] suggested that the Schottky barrier height on GaN should depend directly on the work function or electronegativity difference between the metal electrode and GaN. Foresi and Moustakas [33] observed this direct correlation experimentally, while Guo et al [34] and Mori et al [35] observed only a weak dependence of the Schottky barrier height on the metal work function for n-type GaN and p-type GaN, respectively. The 1998 review of metal-GaN contact technology by Liu and Lau [19] reported that, for a variety of contact metals with both low and high work functions, Schottky barrier heights at the metal-GaN interface varied with metal work function, within the experimental scatter.…”

Section: Introductionmentioning

confidence: 85%

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.

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Section: Introductionmentioning

confidence: 85%

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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“…Compared to other III-V semiconductors, the strong ionic bonding of III-nitrides, due to the large difference in electro-negativity between group III elements and N, suppresses the formation of surface states within the fundamental energy gap. 44,45 Moreover, the MBE grown III-nitride nanowires generally possess N-polarity, which are more stable that their Ga-polarity counterpart in harsh photocatalysis conditions. The balanced surface redox reactions, due to the optimized surface electronic properties with controlled Mg dopant incorporation, also contribute to the enhanced stability.…”

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confidence: 99%

Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation

Chowdhury

Kibria

et al. 2015

APL Materials

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The performance of photochemical water splitting over the emerging nanostructured photocatalysts is often constrained by their surface electronic properties, which can lead to imbalance in redox reactions, reduced efficiency, and poor stability. We have investigated the impact of surface charge properties on the photocatalytic activity of InGaN nanowires. By optimizing the surface charge properties through controlled p-type dopant (Mg) incorporation, we have demonstrated an apparent quantum efficiency of ∼17.1% and ∼12.3% for InGaN nanowire arrays under visible light irradiation (400 nm–490 nm) in aqueous methanol and in the overall neutral-pH water splitting reaction, respectively.

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“…The p-, i-and n-a-Si:H layers, with a total thickness of 288 nm, were deposited by a plasma-enhanced chemical vapor deposition. The contact resistance between back contact and GAZO was measured using the transmission line model (TLM) method [15][16][17]. The optical reflectance of the films was measured with an ultraviolet-visible spectrophotometer (UV-VIS, Hong-Ming Technology Co., Ltd., Taipei, Taiwan).…”

Section: Methodsmentioning

confidence: 99%

Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

Hsu

Lien

et al. 2016

Energies

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Abstract:In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum-titanium (AlTi) back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag) back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

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Metal contacts to gallium nitride

Abstract: Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates

Cited by 332 publications

References 13 publications

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation

Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

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