2018
DOI: 10.3390/s18082494
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A Resonant Pressure Microsensor Based on Double-Ended Tuning Fork and Electrostatic Excitation/Piezoresistive Detection

Abstract: This paper presents a resonant pressure microsensor relying on electrostatic excitation and piezoresistive detection where two double-ended tuning forks were used as resonators, enabling differential outputs. Pressure under measurement caused the deformation of the pressure sensitive membrane, leading to stress buildup of the resonator under electrostatic excitation with a corresponding shift of the resonant frequency detected piezoresistively. The proposed microsensor was fabricated by simplified SOI-MEMS tec… Show more

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Cited by 22 publications
(16 citation statements)
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“…As to excitation and detection of resonators, resonant pressure sensors can work based on electrothermal excitation/piezoresistive detection [5,6], electrostatic excitation/capacitive detection [7,8], electromagnetic excitation/electromagnetic detection [9,10], and electrostatic excitation/piezoresistive detection [11,12]. Compared with other types of resonant pressure sensors, the sensors based on electrostatic excitation/piezoresistive detection are featured with high SNRs and simple structures, and thus this type of resonant pressure sensor is under the intensive studies [13].…”
Section: Introductionmentioning
confidence: 99%
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“…As to excitation and detection of resonators, resonant pressure sensors can work based on electrothermal excitation/piezoresistive detection [5,6], electrostatic excitation/capacitive detection [7,8], electromagnetic excitation/electromagnetic detection [9,10], and electrostatic excitation/piezoresistive detection [11,12]. Compared with other types of resonant pressure sensors, the sensors based on electrostatic excitation/piezoresistive detection are featured with high SNRs and simple structures, and thus this type of resonant pressure sensor is under the intensive studies [13].…”
Section: Introductionmentioning
confidence: 99%
“…However, two silicon-silicon bondings and one anodic bonding were required in the fabrication, which was extremely complicated and suffered from limited yield. In order to simplify the device fabrication process, in our group, silicon on insulator (SOI)-based fabrications and wafer-level vacuum packaging were adopted to form resonant pressure micro sensors based on electrostatic excitation/piezoresistive detection [13,17]. However, the key parameters of the sensor structures were not optimal, which led to lower SNRs and compromised performances.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 7b indicates the changes of the resonant frequencies in response to temperature variation from −35 °C to 85 °C under the application of 100 kPa atmospheric pressure, where the temperature sensitivities were quantified as 3.62 Hz/°C and 3.51 Hz/°C, for the central and side resonators, respectively, which were significantly less than the values (e.g., temperature sensitivities of 12.62 Hz/°C and 12.32 Hz/°C) reported in precious studies [13]. The temperature sensitivity with differentiation was characterized as 0.15 Hz/°C, revealing that the differential setup developed in this paper can effectively address the side effects of temperature variation to some extent.…”
Section: Resultsmentioning
confidence: 77%
“…Leveraging these advantages of electrostatic excitation and piezoresistive detection, previously, we developed a double-ended tuning fork based resonant pressure sensor [13] featured with an accuracy better than 0.01% F.S. (140kpa) However, parallel-plate capacitor drive electrodes were used in the previously reported resonant pressure sensor, which suffered from limitations of negative stiffness, leading to a drive-bias-induced frequency shift and further degradation of the closed-loop frequency stabilities.…”
Section: Introductionmentioning
confidence: 99%
“…However, those developed sensors included only one resonator which might cause the output frequency strongly sensitive to temperature. Our previous works developed several types of resonant pressure sensors based on dual resonators, such as Luo (2014) [22], Xie (2015) [23], and Shi (2018) [24], whereas the lowest working temperature was constrained, which mainly result from the mismatched sensitivities of two resonators. In addition, the pressure measurement ranges of the developed sensor mentioned above were less than 300 kPa, and much larger pressure measure ranges had not been reported.…”
Section: Introductionmentioning
confidence: 99%