A review: aluminum nitride MEMS contour-mode resonator

Abstract

Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

“…Due to the wurtzite structure and specific polar bonding, aluminium nitride exhibits considerable piezoelectric performance, enabling its application in modern micro-electro-mechanical systems (MEMS). [1][2][3][4] Other physical properties of AlN, such as the wide bandgap (6.2 eV) and high thermal conductivity, make it a promising candidate for optoelectronic devices operating in the deep ultraviolet region and at high temperatures. [4,5] Combining its unique characteristics, it can surely become an important material in the field of optical MEMS.…”

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

“…The EDX spectrum of all samples revealed the presence of oxygen. The oxygen incorporation in sputtered aluminum nitride is a known effect [2,6]. Its influence on functional properties must be studied in detail in further works.…”

“…Sputtered aluminum nitride (AlN), depending on composition and microstructure, can fulfill several functional demands such as optical functionalization [1,2], high-k dielectric [3,4], piezoelectric element [5,6], microelectromechanical systems (MEMS) resonators [6] or heat spreader [7]. It is therefore widely used in electronic circuits and MEMS devices.…”

On the Finite-Element Analysis of Resonance MEMS Structures based on Acoustic Lamb Waves

“…The most prominent way to overcome these limits are resonance structures with contour modes [3][4][5][6][7][8] that allow implementing micro-resonators with high natural frequencies while dynamic resistance is relatively low, which facilitates the process of matching with RF frontend.…”