A Review of Different and Promising Defect Etching Techniques: from Si to Ge

Abbadie, A.; Hartmann, Jean‐Michel; Brunier, F.

doi:10.1149/1.2773972

Cited by 22 publications

(10 citation statements)

References 42 publications

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“…Although transmission electron microscopy (TEM) can visualize individual defects, it is destructive and time consuming in nature and, moreover, has a lower detection limit of 10 7 -10 8 dislocations per cm 2 due to the small volume being analyzed. Defect decoration based on chemical etching has been developed for various semiconductors such as (Si)Ge, 7,8 InP, 9 GaAs 10 and GaN 11 and can significantly extend the lower detection limit as the decoration leads to larger features which can be detected and counted at lower magnification thereby facilitating the inspection of larger areas. Although the decoration of defects in confined InP fin structures has been demonstrated recently, 12 it remains challenging to scale the approach to structures with dimensions below 100 nm.…”

Section: Introductionmentioning

confidence: 99%

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

et al. 2018

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Semiconductor heterostructures are at the heart of most nanoelectronic and photonic devices such as advanced transistors, lasers, light emitting diodes, optical modulators and photo-detectors. However, the performance and reliability of the respective devices are often limited by the presence of crystalline defects which arise from plastic relaxation of misfit strain present in these heterogeneous systems. To date, characterizing the nature and distribution of such defects in 3D nanoscale devices precisely and non-destructively remains a critical metrology challenge. In this paper we demonstrate that electron channeling contrast imaging (ECCI) is capable of analyzing individual dislocations and stacking faults in confined 3D nanostructures, thereby fulfilling the aforementioned requirements. For this purpose we imaged the intensity of electrons backscattered from the sample under test under controlled diffraction conditions using a scanning electron microscope (SEM). In contrast to transmission electron microscopy (TEM) analysis, no electron transparent specimens need to be prepared. This enables a significant reduction of the detection limit (i.e. lowest defect density that can be assessed) as our approach facilitates the analysis of large sampling volumes, thereby providing excellent statistics. We applied the methodology to SiGe nanostructures grown by selective area epitaxy to study in detail how the nature and distribution of crystalline defects are affected by the dimensions of the structure. By comparing our observations with the results obtained using X-ray diffraction, TEM and chemical defect etching, we could verify the validity of the method. Our findings firmly establish that ECCI must be considered the method of choice for analyzing the crystalline quality of 3D semiconductor heterostructures with excellent precision even at low defect densities. As such, the technique aids in better understanding of strain relaxation and defect formation mechanisms at the nanoscale and, moreover, facilitates the development and fabrication of next generation nanoelectronic and photonic devices.

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Section: Introductionmentioning

confidence: 99%

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

et al. 2018

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“…This etching technique has been now widely applied on Si, SiGe, Ge and on the corresponding on-insulator substrates such as SOI, sSOI, GeOI. Though the mechanism is completely different from chemical etches, the HCl etch pits densities and distribution have been found to be equivalent with the ones observed after (i) Schimmel etch on SiGe virtual substrates (15), (ii) Secco on strained silicon layers (23), (iii) Secco and Cr-free on pure epitaxial Ge and GeOI substrates (28), (iv) Secco and Cr-free on SOI substrates. Typical pits shapes, illustrating also the rather high selectivity of this technique, have been evidenced on the various materials used for decoration.…”

Section: Ecs Transactions 19 (4) 79-92 (2009)mentioning

confidence: 84%

SOI and Other Semiconductor-On-Insulator Substrates Characterization

et al. 2009

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We focus in this paper on SOI and new engineered on-insulator substrates characterization. After a short review of on-line characterization techniques, we will detail off-line monitoring techniques such as preferential etching and Raman spectroscopy. We will especially highlight their complementarities on strained layers and the need for a proper evaluation of structural quality of on-insulator substrates.

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“…Whereas the etching rate was 1 nm min -1 at 400 °C, it increased rapidly to 10 nm min -1 at 500 °C. 40) The increase in etching rate with increasing temperature explains the decrease in the thickness of the nanosheet bundles and the collapse of the nanosheet structure. As shown in Figs.…”

Section: Ge S 2hcl Gmentioning

confidence: 99%

Morphological and structural modification of CaGe₂ by annealing with MgCl₂/Mg

Sekino

Shimura

Tatsuoka

2023

Jpn. J. Appl. Phys.

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Ge-based nanosheets and GeH phases were synthesized in the vapor phase using CaGe2 crystals as templates. Ge-based nanosheets have been synthesized in the liquid-phase, but not in the vapor-phase. Compared with liquid-phase synthesis, vapor-phase synthesis is more useful for nanostructure control and impurity addition technologies. These technologies will increase the future popularity of nanosheets. And it is important to apply these technologies after clarifying the effects of certain parameters, such as annealing temperature and changes in the mole fractions. As an introduction to the future development of vapor-phase synthesized Ge-based nanosheets, this study proposes the thermal annealing of CaGe2 powders with MgCl2. Furthermore, the effects of changing the molar fraction containing Mg atoms and the behavior of HCl were investigated from 100–600 °C.

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A Review of Different and Promising Defect Etching Techniques: from Si to Ge

Cited by 22 publications

References 42 publications

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

SOI and Other Semiconductor-On-Insulator Substrates Characterization

Morphological and structural modification of CaGe₂ by annealing with MgCl₂/Mg

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A Review of Different and Promising Defect Etching Techniques: from Si to Ge

Cited by 22 publications

References 42 publications

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

SOI and Other Semiconductor-On-Insulator Substrates Characterization

Morphological and structural modification of CaGe2 by annealing with MgCl2/Mg

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Morphological and structural modification of CaGe₂ by annealing with MgCl₂/Mg