A review of ferroelectric switching

Scott, J. F.

doi:10.1080/00150193.2016.1236611

Cited by 29 publications

(10 citation statements)

References 51 publications

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“…This is also consistent with the fact that no observation of the SS improvement under a small gate voltage swing has been reported so far. Finally, it is worthy of mentioning that the polarization switching kinetics depends on a specific model such as Kolmogorov-Avrami-Ishibashi or nucleation-limited switching models 31,41 , while specific switching kinetics does not necessarily lead to the total frustration of the V int enhancement effect 12 . Namely, when the depolarization field is formed due to the bound charge movement, the V int gain can be obtained in any switching kinetics cases.…”

Section: Resultsmentioning

confidence: 99%

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Toriumi

2020

Nat Commun

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Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In this work, stepwise internal potential jumps in a metal/FE/metal/PE/metal system observed near the coercive voltage of the FE layer are reported through carefully designed DC measurements. The relationship of the internal potential jumps with the steep SS in FETs is also experimentally confirmed by connecting a FE capacitor to a simple metal-oxidesemiconductor FET. On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs.

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Section: Resultsmentioning

confidence: 99%

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Toriumi

2020

Nat Commun

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“…The precise direction of domain realignment is dependent on the intrinsic lattice distortion of the material and the axis of the mechanical stress applied. In multiferroics, the nano‐scale (5 ~ 10 nm width) ferroelectric stripe domains are often nested inside larger, irregular, smooth ferroelastic domains . Under the application of higher stress, the ferroelastic domain switching plays a dominant role instead of the ferroelectric domain switching.…”

Section: Resultsmentioning

confidence: 99%

“…In multiferroics, the nano-scale (5 ~ 10 nm width) ferroelectric stripe domains are often nested inside larger, irregular, smooth ferroelastic domains. 36 Under the application of higher stress, the ferroelastic domain switching plays a dominant role instead of the ferroelectric domain switching. Figure 3 shows the indentation crack pattern of PZT-NC ceramics produced in two different planes.…”

Section: Ferroelectric Hysteresis Loopmentioning

confidence: 99%

Ferroelastic domain switching and R‐curve behavior in lead zirconate titanate (Zr/Ti = 52/48)‐based ferroelectric ceramics

Chen

et al. 2019

J Am Ceram Soc

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In this work, ferroelastic domain switching and R‐curve behavior in lead zirconate titanate (Nb/Ce co‐doped Pb(Zr0.52Ti0.48)O3, ab. PZT‐NC)‐based ferroelectric ceramics were investigated, using the indentation‐strength‐in‐bending (ISB) method. Firstly, Vickers indentation test examined the notable fracture anisotropy of PZT‐NC ceramics between the poling direction and its perpendicular direction, and the crack open displacement (COD) profiles in the two directions were also theoretically calculated from the indentation fracture mechanics. And then two kinds of ferroelastic domain switching modes (in‐plane and out‐of‐plane) were used for explaining such anisotropic propagation behavior of indentation cracks. The subsequent three‐point bending test illustrated the dependence of fracture strength on indentation load and the rising crack growth resistance curves (R‐curves) in two directions. The resulted R‐curves were fitted by the Hill's type Growth Function successfully, giving the reasonable values of crack extension exponential (n), plateau fracture toughness (Kmax), and initial fracture toughness (Kini). The in‐plane ferroelastic domain switching was identified as a more significant toughening mechanism for PZT‐NC ceramics than the out‐of‐plane switching due to more switchable domains.

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“…In subsequent ferroelectric switching, ferroelastic switching is reduced by domain pinning and by the predominance of 180° ferroelectric domains, as confirmed by polarized light microscopy. RUS under in-situ electric field therefore demonstrates to be an effective technique for the investigation of electromechanical coupling in ferroelectrics.The process of polarization switching in ferroelectrics is generally not homogeneous and involves nucleation and growth of domains [1,2]. In prototypical tetragonal ferroelectrics, such as BaTiO3 at room temperature, two kinds of ferroelectric domains can nucleate [3]: 180° domains with polarizations antiparallel to each other, which minimize depolarization fields, and 90° domains with polarizations orthogonal to each other, which minimize strain via the formation of twins.…”

mentioning

confidence: 99%

“…The process of polarization switching in ferroelectrics is generally not homogeneous and involves nucleation and growth of domains [1,2]. In prototypical tetragonal ferroelectrics, such as BaTiO3 at room temperature, two kinds of ferroelectric domains can nucleate [3]: 180° domains with polarizations antiparallel to each other, which minimize depolarization fields, and 90° domains with polarizations orthogonal to each other, which minimize strain via the formation of twins.…”

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confidence: 99%

Elastic anomalies associated with domain switching in BaTiO3 single crystals under in situ electrical cycling

et al. 2019

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The elastic response of BaTiO3 single crystals during electric field cycling at room temperature has been studied using in-situ Resonant Ultrasound Spectroscopy (RUS), which allows monitoring of both the elastic and anelastic changes caused by ferroelectric polarization switching. We find that the first ferroelectric switching of a virgin single crystal is dominated by ferroelastic 90° switching. In subsequent ferroelectric switching, ferroelastic switching is reduced by domain pinning and by the predominance of 180° ferroelectric domains, as confirmed by polarized light microscopy. RUS under in-situ electric field therefore demonstrates to be an effective technique for the investigation of electromechanical coupling in ferroelectrics.The process of polarization switching in ferroelectrics is generally not homogeneous and involves nucleation and growth of domains [1,2]. In prototypical tetragonal ferroelectrics, such as BaTiO3 at room temperature, two kinds of ferroelectric domains can nucleate [3]: 180° domains with polarizations antiparallel to each other, which minimize depolarization fields, and 90° domains with polarizations orthogonal to each other, which minimize strain via the formation of twins. During electrical poling, local strains are generated when 90° domains switch, but not when 180° domains switch. Limiting the mobility of domain walls by introducing specific point defects and domain engineering has proven an effective strategy to enhance piezoelectricity in BaTiO3 [4,5]. Large strains are desirable, e.g., to achieve giant magnetoelectric effects in multiferroic composites [6][7][8][9][10], and polarization switching without domain propagation is preferred for ferroelectric memory devices [11,12]. Separately, domain wall pinning and domain jamming may cause fatigue effects in ferroelectrics, hampering polarization switching upon repeated voltage cycling, ultimately limiting the performance of devices [13,14]. Understanding the role of domain structure on ferroelectric switching is thus of high technological relevance for the optimization

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A review of ferroelectric switching

Cited by 29 publications

References 51 publications

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Ferroelastic domain switching and R‐curve behavior in lead zirconate titanate (Zr/Ti = 52/48)‐based ferroelectric ceramics

Elastic anomalies associated with domain switching in BaTiO3 single crystals under in situ electrical cycling

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