A review of Ga⁺ FIB/SIMS

Abstract

FIB/SIMS analyses has been performed and reported for well over a decade, however, only within limited research groups due to the lack of commercial FIB/SIMS instrumentation. Commercial availability of FIB/SIMS failed mainly due to two reasons: (i) the low secondary ion yields from the primary Ga + source; and (ii) unrealistic expectations in sensitivity detection limits using the small FIB source. Despite the low yields and limits in sensitivity detection limited by the small volume of material analyzed, FIB/SIMS is extremely useful for conventional ppm SIMS analysis as well as high-spatial resolution analyses.

Spatially Engraving Morphological Structure on a Polymeric Surface by Ion Beam Milling

“…The focused ion beam (FIB) technique has proven its efficiency in manufacturing semiconductors, metals and metal oxides, with its unique capability for rapid prototyping and high precision [17,18]. The fundamental mechanism of FIB is that highly energetic ions driven by an electrical field knock atoms off the material surface by electro-collision and the recoil action between the ion and target material surface (Figure 1).…”

Argon cluster cleaning of Ga+ FIB‐milled sections of organic and hybrid materials

“…Secondary ion mass spectrometry (SIMS) has been used for many years with focused ion bombardment (FIB) to provide analysis through very local sections of materials to depths of many micrometres . This complements, very nicely, the traditional sputter depth profiling of uniform layers where the total depths are generally smaller but where depth resolutions may be superior and may be typically around 1% of the depth sputtered .…”

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometer analysis of the grain boundary segregation/precipitation of boron in steel

“…To achieve a high spatial resolution sufficient for investigating the state of boron, we used Ga‐focused ion beam (FIB) as the primary source. However, the application of Ga‐FIB‐SIMS to materials research has been limited occasionally, mainly because of the low secondary ion yield from the Ga + primary and the sensitivity using a high spatial resolution FIB source …”

“…However, the application of Ga-FIB-SIMS to materials research has been limited occasionally, mainly because of the low secondary ion yield from the Ga + primary and the sensitivity using a high spatial resolution FIB source. [6,7] To overcome these points, we applied a low energy oxygen ion beam prior to the Ga-FIB-SIMS analysis. It has been reported that the positive secondary ion yield is enhanced by oxygen ion implantation and flooding.…”