A Review of Instability Mechanisms in Passivation Films

Kerr, D. R.

doi:10.1109/irps.1970.362425

Cited by 16 publications

(13 citation statements)

References 5 publications

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“…The presence of charged ions in thin oxide films was first reported in the mid and late 1960s when Bell Labs, Fairchild and IBM engaged in the study of thermal silicon dioxide (SiO2) for the production of field-effect transistors (FET) [1]. The work of Snow et al [2][3][4] showed that the ionic conductivity in thin SiO2 films, as also reported by Yamin [5][6][7] and Kerr [8][9][10], was largely due to the presence of sodium and potassium ions. Moreover, they showed that these ions were responsible for the instability problems leading to failure in Metal-Oxide-Semiconductor field effect transistors (MOSFETs), as also thoroughly studied by Hofstein [11][12][13].…”

Section: Introductionmentioning

confidence: 93%

“…However, the initial distribution of energy of the trapped ions at an interface should be known [39]. Approximations to this distribution have been used by assuming a single activation energy [39], a Gaussian distribution of traps as a function energy [8,46], or even a convolution of Dirac functions and the measured current density [47]. Choquet and Balland [48] published an elegant algorithm to calculate the initial ion distribution yet some discrepancies were found in their calculation, thus there still exists uncertainty in determining the initial concentration and energy distribution of trapped ions.…”

Section: Introductionmentioning

confidence: 99%

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Potassium ions in SiO₂: electrets for silicon surface passivation

Wilshaw¹

2017

J. Phys. D: Appl. Phys.

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This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work electric field assisted migration of ions is used to rapidly drive K + into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5x10 12 e cm -2 have been achieved. This charge was seen to be stable for over 1500 days, with decay time constants as high as 17,000 days, producing an effectively passivated oxide-silicon interface with SRV< 7 cm/s, in 1 Ωcm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Potassium ions in SiO₂: electrets for silicon surface passivation

Wilshaw¹

2017

J. Phys. D: Appl. Phys.

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“…In either case, the hoped-for outcome is the formation of a semiconducting phase having a low concentration of electronic states in its bandgap. Such a phase is desirable because it inhibits the rate of corrosion even when the driving force is large. − …”

Section: Introductionmentioning

confidence: 99%

Poly(bisphenol) Polymers as Passivating Agents for Carbon Electrodes in Ionic Liquids

Fletcher

Black

2016

J. Phys. Chem. C

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Poly(bisphenol) polymers are identified as a new class of passivating agents for carbon electrodes in ionic liquids. They are inert and can readily be deposited as thin, conformal films by electropolymerization. Unlike conventional poly(monophenol) polymers, a single voltammetric scan is sufficient to accomplish their deposition. This is seen, for example, in the cases of poly(bisphenol A) and poly(bisphenol P). In each case, the thickness of the electropolymerized films is determined by the quantum tunneling distance of the faradaic electrons. Thus, film growth terminates when the faradaic electrons can no longer transit the film at a measurable rate. At that point, all the faradaic reactions cease, while the capacitive charging processes continue unabated. Experimentally, film thicknesses are observed in the range 4−30 nm. A challenging test for the poly(bisphenol) polymers is to coat them onto arrays of microelectrodes (RAM electrodes). Normally, microelectrodes are difficult to coat by electropolymerization due to the intense flux of soluble intermediates away from their surfaces. In the present work, however, coating is facile due to the extreme insolubility of the intermediates. This same property makes the films strongly adherent. Such remarkable behavior suggest that poly(bisphenol) films may have an important role to play as passivating agents in supercapacitors. They may also find application in other areas of technology that require thin-film passivity, such as nanostructural engineering and device physics.

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“…The distribution of activation energies has previously been approximated most typically using either single energy values, 48 or Gaussian distributions. 32,[49][50][51] In this work a single activation energy is used for simplicity. Ions are thermally excited over the injection barrier during a high temperature anneal.…”

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confidence: 99%

Electrostatic Tuning of Ionic Charge in SiO₂ Dielectric Thin Films

Al‐Dhahir¹,

Kealy²,

Kelly³

et al. 2022

ECS J. Solid State Sci. Technol.

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Dielectric thin films are a fundamental part of solid-state devices providing the means for advanced structures and enhanced operation. Charged dielectrics are a particular kind in which embedded charge is used to create a static electric field which can add functionality and improve the performance of adjacent electronic materials. To date, the charge concentration has been limited to intrinsic defects present after dielectric synthesis, unstable corona charging, or complex implantation processes. While such charging mechanisms have been exploited in silicon surface passivation and energy harvesters, an alternative is presented here. Solid-state cations are migrated into SiO2 thin films using a gateless and implantation-free ion injecting method, which can provide greater long-term durability and enable fine charge tailoring. We demonstrate the migration kinetics and the stability of potassium, rubidium, and caesium cations inside of SiO2 thin films, showing that the ion concentration within the film can be tuned, leading to charge densities between 0.1-10 x 1012 qcm-2. A comprehensive model of ion injection and transport is presented along a detailed investigation of the kinetics of alkali cations. Integrating ionic charge into dielectrics to produce controlled electric fields can enable new architectures where field effect is exploited for improved electron devices.

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A Review of Instability Mechanisms in Passivation Films

Cited by 16 publications

References 5 publications

Potassium ions in SiO₂: electrets for silicon surface passivation

Potassium ions in SiO₂: electrets for silicon surface passivation

Poly(bisphenol) Polymers as Passivating Agents for Carbon Electrodes in Ionic Liquids

Electrostatic Tuning of Ionic Charge in SiO₂ Dielectric Thin Films

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A Review of Instability Mechanisms in Passivation Films

Cited by 16 publications

References 5 publications

Potassium ions in SiO2: electrets for silicon surface passivation

Potassium ions in SiO2: electrets for silicon surface passivation

Poly(bisphenol) Polymers as Passivating Agents for Carbon Electrodes in Ionic Liquids

Electrostatic Tuning of Ionic Charge in SiO2 Dielectric Thin Films

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Product

Resources

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Potassium ions in SiO₂: electrets for silicon surface passivation

Potassium ions in SiO₂: electrets for silicon surface passivation

Electrostatic Tuning of Ionic Charge in SiO₂ Dielectric Thin Films