A Review of Proximity Effect Correction in Electron-beam Lithography

Li, Pengcheng

doi:10.48550/arxiv.1509.05169

Cited by 4 publications

(4 citation statements)

References 59 publications

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“…Proximity effects can be accounted and compensated for, however, it requires simulation, optimization, and verification for each single pattern, resist, and every electron beam lithography system. As our simulation suggests (Supporting Information), and from the literature, 25 it is possible to significantly reduce the PE using thinner ebeam resists. We tuned the resist thickness (for negative tone, 25−30 nm XR1541, and for positive tone 90−100 nm PMMA/AR-P 6200.04), the reactive ion etching chemistry (12.5 sccm SF 6 , 3.4 sccm O 2 , and a process pressure of ∼4 μbar), and etching power and time (50 W and 45 s), and fabricated 70−100 nm wide nanowires made out of 10−13 nm thick films.…”

supporting

confidence: 53%

Efficient Single-Photon Detection with 7.7 ps Time Resolution for Photon-Correlation Measurements

et al. 2020

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A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8−11 nm) and improving the pattern fidelity of the nanostructure of the superconducting nanowire single-photon detectors (SNSPD), we fabricated devices demonstrating superior performance over all previously reported detectors in the combination of efficiency and time resolution. Our findings prove that small variations in the nanowire width, in the order of a few nanometers, can lead to a significant penalty on their temporal response. Addressing these issues, we consistently achieved high time resolution (best device 7.7 ps, other devices ∼10−16 ps) simultaneously with high system detection efficiencies (80−90%) in the wavelength range of 780−1000 nm, as well as in the telecom bands (1310−1550 nm). The use of thicker films allowed us to fabricate large-area multipixel devices with homogeneous pixel performance. We first fabricated and characterized a 100 × 100 μm 2 16-pixel detector and showed there was little variation among individual pixels. Additionally, to showcase the power of our platform, we fabricated and characterized 4-pixel multimode fiber-coupled detectors and carried out photon-correlation experiments on a nanowire quantum dot resulting in g 2 (0) values lower than 0.04. The multipixel detectors alleviate the need for beamsplitters and can be used for higher order correlations with promising prospects not only in the field of quantum optics, but also in bioimaging applications, such as fluorescence microscopy and positron emission tomography.

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confidence: 53%

Efficient Single-Photon Detection with 7.7 ps Time Resolution for Photon-Correlation Measurements

et al. 2020

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“…The length of the straight segments is chosen randomly based on the total cross section of elastic scattering along the trajectory. Before scattering, in correspondence to the continuously slowing down approximation, the electron energy decreases, taking into account the length of the segment and the current value of stopping power (for details see [ 12 , 13 , 14 , 15 , 16 , 17 , 24 ]).…”

Section: Theory and Calculationmentioning

confidence: 99%

“…From (1), it follows that for the practical use of PF it is necessary to know the values of the parameters α, β, η. The experience of practical correction [ 10 , 13 , 14 ] and extensive simulations [ 15 , 16 , 17 ] show that the three parameters found in the experiment are in most cases quite enough to obtain the required lithography accuracy.…”

Section: Introductionmentioning

confidence: 99%

Calculation of the Absorbed Electron Energy 3D Distribution by the Monte Carlo Method, Presentation of the Proximity Function by Three Parameters α, β, η and Comparison with the Experiment

2022

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The paper presents a program for simulating electron scattering in layered materials ProxyFn. Calculations show that the absorbed energy density is three-dimensional, while the contribution of the forward-scattered electrons is better described by a power function rather than the commonly used Gaussian. It is shown that for the practical correction of the proximity effect, it is possible, nevertheless, to use the classical two-dimensional proximity function containing three parameters: α, β, η. A method for determining the parameters α, β, η from three-dimensional calculations based on MC simulation and development consideration is proposed. A good agreement of the obtained parameters and experimental data for various substrates and electron energies is shown. Thus, a method for calculating the parameters of the classical proximity function for arbitrary layered substrates based on the Monte Carlo simulation has been developed.

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“…6 With each technology node, the features on the photomask get denser and denser, which will decrease the normalized image log slope from this elevated background dose with each generation of the photomask, making them tougher and tougher to produce because the time taken to fabricate these photomasks gets longer and longer, meaning that this is becoming a significant bottleneck. 7 To alleviate this issue, one can either expose the resist using a lower acceleration voltage or design new electron beam resists that are more sensitive to the electron beam. 8 Lowering the energy of electrons will broaden the electron beam leading to larger feature sizes.…”

Section: Introductionmentioning

confidence: 99%

Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production

Chaker

Alty

Winpenny³

et al. 2022

ACS Appl. Nano Mater.

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Metal–organic materials such as [NH2(CH2–CHCH2)2][Cr7NiF8(Pivalate)16] can act as negative tone resists for electron beam lithography (EBL) with high-resolution patterning of sub-40 nanometer pitch while exhibiting ultrahigh dry etch selectivities >100:1 and giving line dose exposures >11,000 pC/cm. It is clear that the resist sensitivity is too low to be used to manufacture the latest nanoscale photomasks that are suitable for extreme ultraviolet lithography. Therefore, the focus of this work here is to improve the sensitivity of this resist while maintaining its resolution and dry etch selectivity. Using our latest Monte Carlo simulation called Excalibur, we predict that the sensitivity would increase by a factor of 1.4 when the nickel atom is substituted by a cadmium atom. EBL studies showed an excellent agreement with the simulation, and plasma etching studies demonstrated that this did not affect the dry etch performance of the resist which remains very good with a selectively of ca. 99:1 for the etching of silicon at these resolutions with a low sensitivity of 7995 pC/cm.

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A Review of Proximity Effect Correction in Electron-beam Lithography

Abstract: I review the work of proximity effect correction (PEC) in electron-beam (e-beam) lithography with emphasis on dose modification and shape modification PEC techniques.

Cited by 4 publications

References 59 publications

Efficient Single-Photon Detection with 7.7 ps Time Resolution for Photon-Correlation Measurements

Efficient Single-Photon Detection with 7.7 ps Time Resolution for Photon-Correlation Measurements

Calculation of the Absorbed Electron Energy 3D Distribution by the Monte Carlo Method, Presentation of the Proximity Function by Three Parameters α, β, η and Comparison with the Experiment

Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production

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