A review of RESURF technology

Ludikhuize, A.W.

doi:10.1109/ispsd.2000.856763

Cited by 272 publications

(91 citation statements)

References 27 publications

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“…Characteristic are two distinct peaks of the electric field at the gate electrode and the drain contact. Further device optimization can therefore follow the ideas developed for lateral RESURF devices [14]. Fitting a curve to published experimental values of R DS (on) and breakdown voltage suggests a dependency R ON · A V ≈ V B 1.3 similar to the relationship derived for Superjunction transistors.…”

Section: Gan High Electron Mobility Transistormentioning

confidence: 70%

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

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Section: Gan High Electron Mobility Transistormentioning

confidence: 70%

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

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“…However to date, there has been no explanation as to why C conveys an advantage over Fe in breakdown voltage. In this letter, we use simulation, supported by dynamic R ON measurement, to show that another consequence of this vertical leakage path in compensated C-doped GaN is a reduced surface electric field (RESURF) effect [9]. RESURF effects increase breakdown voltage, however their applicability to C-doped GaN-on-Si devices has not been realized before.…”

Section: Introductionmentioning

confidence: 99%

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Uren

Caesar

Karboyan

et al. 2015

IEEE Electron Device Lett.

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I. INTRODUCTIONEMTS based on the GaN/AlGaN materials system are rapidly becoming the semiconductor device of choice for RF and power switching applications. These devices require a semi-insulating buffer to suppress leakage and punch-through. RF devices frequently make use of iron (Fe) doping to render the GaN insulating, but for the higher voltages required for many power switching applications, it has been found that carbon (C) doping delivers higher breakdown voltage and lower off-state leakage [1,2]. Unfortunately it has also been found that using carbon can result in a transitory increase in R ON , also known as current-collapse (CC), when switched from the off to the on-state [2,3]. With field plates now universally used to control surface effects, it is clear that the remaining CC in these devices mostly results from charge storage in deep levels in the buffer. Our previous studies have shown that the difference in CC between Fe and C doping results from their acceptor trap levels pinning the bulk Fermi level in the upper and lower halves of the bandgap respectively [4]. GaN:C is p-type with its low hole density, and hence high resistivity, giving long time constants for charging processes (a hole density of only 10 4 cm -3 was inferred in [5]

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“…The main static performance indexes for LDMOSFET (Lateral Double-diffused Metal-Oxide-Semiconductor Field-Effect Transistor) are the breakdown voltage (BV) and the specific on-resistance (R s,on ) [1,2,3]. The REBULF (REduced BULk Field) concept has been introduced to increase the BV of LDMOS [4,5].…”

Section: Introductionmentioning

confidence: 99%

The influence of the <i>N</i><sup>+</sup> floating layer on the drift doping of RESURF LDMOS and its analytical model

Wang

et al. 2016

IEICE Electron. Express

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The influence of the N + floating layer on the drift doping of RESURF LDMOS is studied in this paper. By optimizing the electric field distribution, a new RESURF criterion for LDMOS with N + floating layer is developed as: N D t S ≤ 0.83 × 10 12 cm −2 (N D and t S are the drift doping and thickness, respectively). The optimal drift doping is smaller than that of Single RESURF LDMOS (N D t S ≤ 1.4 × 10 12 cm −2 ). Both analytical and numerical results show the N + floating layer can be used to increase the breakdown voltage of LDMOS but at the cost of a low drift doping and a large on-resistance. The effect of the N + floating layer on REBULF LDMOS is also studied in some detail. This model can be used in the design of RESURF and REBULF LDMOS to optimize the doping concentration of the drift region.

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A review of RESURF technology

Cited by 272 publications

References 27 publications

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

The influence of the <i>N</i><sup>+</sup> floating layer on the drift doping of RESURF LDMOS and its analytical model

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