A review of semiconductor heterojunctions

Calow, J. T.; Deasley, P. J.; Owen, S. J. T.; Webb, Paul W.

doi:10.1007/bf00550056

Cited by 38 publications

(14 citation statements)

References 78 publications

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“…While interfacial effects in p-n type semiconducting oxide heterojunctions have been studied for decades [1], unexpected superconducting [2] and magnetic [3] properties have been found in oxide film heterostructures recently. Rapidly growing attention is being directed towards the investigation of ionic conductivity in oxide film heterostructures because of their possible deployment in solid-state ionic devices.…”

Section: Introductionmentioning

confidence: 99%

Ionic conductivity in oxide heterostructures: the role of interfaces

Fabbri

Pergolesi

Traversa

2010

Science and Technology of Advanced Materials

156

120

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Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

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Section: Introductionmentioning

confidence: 99%

Ionic conductivity in oxide heterostructures: the role of interfaces

Fabbri

Pergolesi

Traversa

2010

Science and Technology of Advanced Materials

156

120

View full text Add to dashboard Cite

show abstract

“…[35] For electronic applications relaying on the existence of internal electric field such as, solar cell, transistor, diode, etc., it is crucial to obtain nonohmic contacts, including p-n junction, Schottky and other types of rectifying heterojunction. [36] In some cases, the image force and surface-states induced Fermi level pinning lead to charge rearrangement at the ISC contact interface. [37][38][39] Generally speaking, for both ohmic and Schottky devices, fabrication of a clean defect-free interface is the prerequisite to Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces.…”

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confidence: 99%

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Lin

Guan

et al. 2022

Advanced Materials

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Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic–inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge‐transporting layers have attracted lots of attention due to the photovoltaic and light‐emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non‐polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state‐of‐the‐art strategies on interface‐related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self‐assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.

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“…Recently, lateral heterojunctions between two analogous two-dimensional (2D) transitional metal dichalcogenides (TMDs) with different direct bandgaps have been realized. − This invention opens a new avenue to engineer their optical properties and this can certainly lead to potential photonic applications . However, heterojunctions possess inherent challenges in fabrication due to the lattice mismatches over the boundaries and differences in thermal expansion. , While a lot of research efforts have been devoted to the development of heterojunction comprising two different types of TMDs, it would significantly simplify the operation process of 2D photonics if the heterojunction could be realized in a homogeneous TMD by way of engineering the optical properties within the 2D TMD itself. Therefore, lateral homojunction in a TMD of single material is desired.…”

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confidence: 99%

Fluorescence Concentric Triangles: A Case of Chemical Heterogeneity in WS₂ Atomic Monolayer

Liu

et al. 2016

Nano Lett.

109

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We report a novel optical property in WS2 monolayer. The monolayer naturally exhibits beautiful in-plane periodical and lateral homojunctions by way of alternate dark and bright band in the fluorescence images of these monolayers. The interface between different fluorescence species within the sample is distinct and sharp. This gives rise to intriguing concentric triangular fluorescence patterns in the monolayer. The novel optical property of this special WS2 monolayer is facilitated by chemical heterogeneity. The photoluminescence of the bright band is dominated by emissions from trion and biexciton while the emission from defect-bound exciton dominates the photoluminescence at the dark band. The discovery of such concentric fluorescence patterns represents a potentially new form of optoelectronic or photonic functionality.

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A review of semiconductor heterojunctions

Cited by 38 publications

References 78 publications

Ionic conductivity in oxide heterostructures: the role of interfaces

Ionic conductivity in oxide heterostructures: the role of interfaces

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Fluorescence Concentric Triangles: A Case of Chemical Heterogeneity in WS₂ Atomic Monolayer

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A review of semiconductor heterojunctions

Cited by 38 publications

References 78 publications

Ionic conductivity in oxide heterostructures: the role of interfaces

Ionic conductivity in oxide heterostructures: the role of interfaces

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Fluorescence Concentric Triangles: A Case of Chemical Heterogeneity in WS2 Atomic Monolayer

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Fluorescence Concentric Triangles: A Case of Chemical Heterogeneity in WS₂ Atomic Monolayer