A review of the simulation studies on the bulk growth of silicon carbide single crystals

Ha, Minh-Tan; Jeong, Seong‐Min

doi:10.1007/s43207-022-00188-y

Cited by 11 publications

(5 citation statements)

References 104 publications

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“…without going through the liquid phase. These gas-phase substances nucleate and grow at the C face of seed crystal, forming SiC single crystals [3]. The temperature gradient from the surface of the raw material to the seed crystal is the driving force for the crystal growth.…”

Section: Methodsmentioning

confidence: 99%

“…crystal growth process, the SiC raw material is in a relatively high-tem the seed crystal is in a relatively low-temperature zone, which promo and decomposition of the raw material and directly generates gas-pha (mainly including Si, Si2C, SiC2, etc.) without going through the liquid phase substances nucleate and grow at the C face of seed crystal, form tals [3]. The temperature gradient from the surface of the raw materia is the driving force for the crystal growth.…”

Section: Methodsmentioning

confidence: 99%

“…The preparation of large-sized SiC single crystals has always been the focus of research in the field. The mainstream preparation method for SiC single crystals is the PVT method [3]. Usually, the seed crystal and raw materials are placed at the top and bottom of the crucible, respectively.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations

Zhang,

Li,

et al. 2023

Crystals

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As the size of SiC crystals gradually increase, it becomes increasingly difficult to control the temperature distribution inside the crucible. In this study, numerical simulation tools were used to model the thermal field of SiC single crystal growth using the resistance heating PVT method. Through adjusting the relative position of the heater, adjusting the crucible and insulation structure, and setting up dual heaters, the temperature field distribution patterns under different conditions were obtained. The research results indicate that adjusting the relative positions of the heater, the crucible and insulation structure can achieve uniform temperature conditions under specific conditions. The use of dual heaters can achieve ideal crystal growth conditions with a growth interface temperature difference of less than 10 K, and an axial temperature gradient magnitude of about 10 K/cm, with a smaller edge axial temperature gradient, which is helpful to avoid edge polycrystalline formation and improve crystal quality. Meanwhile, combined with the top insulation layer, more energy-saving effects can be achieved, providing a reference for the preparation of large-sized SiC crystals.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations

Zhang,

Li,

et al. 2023

Crystals

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“…It is not yet possible to aver which process will be widely adopted in the future. Particularly, high-quality SiC single crystal produced by solution growth at a considerable rate has been reported in recent years, SiC bulk growth in the liquid phase requires a lower temperature than that of the sublimation or deposition process, and it demonstrates excellence in producing P-type SiC substrates (Table 3) [33,34] . General growth rate ~0.…”

Section: Three Major Techniques For Sic Crystal Growthmentioning

confidence: 99%

Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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The third-generation semiconductor silicon carbide (SiC) has the characteristics of the wide band gap, high electric breakdown voltage, large saturated drift velocity, and high thermal conductivity, which are favorable for power devices under high-voltage, high temperature, and high-frequency scenarios [1,2] . Automotive applications are expected to remain a primary market for SiC power segments since they are one of the main drivers of the total power electronics market. The overall market for SiC devices is expected to exceed US$2.5 billion by 2025, with a compound annual

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“…In this regard, the optimization of the processes for obtaining GR, based on numerical simulation methods, is an urgent task. Note that the simulation of the processes of high-temperature synthesis of SiC single crystals by the method of physical vapor transport (PVT), also implemented in installations with RF heating, was developed since the 1990s and already proved its high efficiency [5][6][7][8][9]. To date, a number of commercial software packages was developed, such as Virtual Reactor, COMSOL Multiphysics, ANSYS Fluents, and others, which allow simulation based on the specific features of the equipment used and the specified growth conditions.…”

Section: Introductionmentioning

confidence: 99%

The temperature distribution simulation in the graphene sublimation growth zone on SiC substrate

et al. 2022

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The simulation results of the temperature distribution in the growth area of graphene layers obtained by the method of thermal decomposition of the silicon carbide surface substrates in setup with induction heating are presented. The heating parametrs of the setup elements are calculated using the commercial package COMSOL Multiphysics taking into account the electrical, thermal and magnetic properties of the materials from which the growth plant elements are made. A numerical estimate of the heating inhomogeneity of silicon carbide plates over its area during the growth of graphene layers at a given temperature is given. It is shown that the lateral temperature distribution over the area of the plate has radial symmetry with decreasing values towards the center. Keywords: graphene, silicon carbide, simulation, temperature distribution, sublimation growth.

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A review of the simulation studies on the bulk growth of silicon carbide single crystals

Cited by 11 publications

References 104 publications

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations

Review of solution growth techniques for 4H-SiC single crystal

The temperature distribution simulation in the graphene sublimation growth zone on SiC substrate

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