A review of the synthesis, fabrication, and recent advances in mixed dimensional heterostructures for optoelectronic devices applications

Ahmad, Waqas; Tareen, Ayesha Khan; Khan, Karim; Khan, Mohsin; Khan, Qasim; Wang, Zhiming; Maqbool, Muhammad

doi:10.1016/j.apmt.2022.101717

Cited by 21 publications

(9 citation statements)

References 220 publications

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“…[ 118 ] 2D heterostructures demonstrated excellent electrical characteristics such as near ideal subthreshold, large ON/OFF ratio, and high carrier mobility. [ 119 ] For the prospects of FETs based photodetection, charge carrier mobility, ON/OFF ratio, and near ideal subthreshold with small gate voltage are essential parameters to construct an ideal FET‐based photodetector. A group of researchers demonstrated the FET‐based photodetector involving the materials of PdSe 2 and MoS 2 as shown in Figure a.…”

Section: Applicationsmentioning

confidence: 99%

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Ahmad

Peng

Khan

et al. 2023

Adv Funct Materials

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Van der Waals (vdWs) heterostructures enable bandgap engineering of different 2D materials to realize the interlayer transition via type‐II band alignment leading to broaden spectrum that is beyond the cut‐off wavelength of individual 2D materials. Interlayer transition has a significant effect on the optoelectronic performance of vdWs heterostructure devices, and strong interlayer transition in 2D vdWs heterojunction is always demandable for sufficient charge transfer and rapid speed response. Herein, a state‐of‐the‐art review is presented on recent progress on interlayer transition in vdWs heterostructures for near‐infrared (NIR) photodetectors. First, the general synthesis techniques for vdWs heterostructures, band alignments in the vdWs heterostructures are provided. Then, the mechanism of interlayer transition in vdWs heterostructure and recent progress on interlayer transition in vdWs heterostructures for NIR photodetectors are summarized. Afterward, some worthy applications of NIR photodetectors are reviewed in related areas of this topic. At the last, an outlook, challenges, and future research directions of vdWs heterostructures for photodetectors at broaden response spectrum are presented.

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Section: Applicationsmentioning

confidence: 99%

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Ahmad

Peng

Khan

et al. 2023

Adv Funct Materials

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“…Image sensing is an important field in optoelectronic devices widely employed in various applications such as high‐resolution cameras, fire determination, fax machines, and missile warning systems. [ 170 ] Extensive reports have been published in the literature to investigate image‐sensing applications based on 2D materials. [ 171 ] PtTe 2 /Si‐nano‐pillar array heterostructure is an effective approach to constructing the homemade imaging system.…”

Section: Applicationsmentioning

confidence: 99%

“…The device can further be integrated with other optoelectronic devices to offer various applications, including photo‐sensing, polarization, imaging, and stretchable optoelectronic devices. [ 170b ]…”

Section: Applicationsmentioning

confidence: 99%

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Ahmad

Zhuang

et al. 2023

Small

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indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), gallium antimonide (GaSb), and indium arsenide (InAs), exhibit higher detectivity (D*), making them useful for infrared (IR) optical devices with a spectral range of up to 15 000 nm and D* as high as ≈10 14 Jones. However, employing these conventional photodetectors in commercial applications is challenging due to several factors, including narrow bandgap, complex and expensive fabrication process, and low-temperature operation mode. [2] Usually, conventional bulk semiconductor materials, even in the form of thin films, cannot be tempered. Using these materials to develop transparent, flexible, and bendable devices is challenging. Si possesses an indirect energy bandgap (1.12 eV) that is suitable for visible to nearinfrared (NIR) spectrum but is significantly limited beyond the NIR spectrum. Therefore, there is an increased need for novel materials that can overcome the limitations of bulk Si for broadband photodetection and can be suitable for developing advanced electronic and optoelectronic devices at low cost. Compared with conventional materials-based photodetectors, 2D materialsbased photo detectors are very sensitive to broadband spectrum owing to their tunable bandgap, which varies from 0 to 3 eV, as shown in Figure 1. [3] 2D materials-based photodetectors show a broad spectrum and excellent stability and thus can operate at room temperature. [4] 2D materials-based photodetectors not only show broaden spectrum but also show excellent stability and thus can operate at room temperature. [1b,5] The discovery of 2D transition metal dichalcogenides (TMDCs) materials has invoked great research interests in nanoelectronic and optoelectronic devices owing to their fascinating electronic and optoelectronic properties. In 2004, A. K. Geim and K. Novoselov assembled the graphene in the laboratory by mechanical exfoliation at room temperature. [6] According to the crystalline structure, 2D TMDCs layered materials can be divided into different prismatic phases such as hexagonal, octahedral, and tetragonal. In 2D TMDCs, each unit (MX2) is composed of a transition metal (M) layer sandwiched between two chalcogens (X) atomic layers. [3e,7] The 2D TMDCs materials family is a continuously emerging class of material systems with more than 150 different types of layered materials that can easily be exfoliated from the bulk crystals and possess distinctive features. [8] For instance, graphene with zero bandgap shows linear depression near the Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband...

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“…Today, the computational density functional theory technique has substantially expanded the materials design process, either alone or in tandem with experimental research, owing to the relatively complex level of concepts and computer modelling [ [1] , [2] , [3] ]. Moreover, at the turn of the last decade, graphene, a single layer of graphite exfoliated by Geim and co-workers, became the focus of intense research due to its remarkable physical properties [ [4] , [5] , [6] ]. Since its discovery, several 2D materials have been synthesized, including hexagonal boron nitride, silicene, transition metal dichalcogenide, antimonene, and phosphorene [ [7] , [8] , [9] , [10] , [11] ].…”

Section: Introductionmentioning

confidence: 99%

Recent advances in density functional theory approach for optoelectronics properties of graphene

Olatomiwa¹,

Adam²,

Edet³

et al. 2023

Heliyon

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A review of the synthesis, fabrication, and recent advances in mixed dimensional heterostructures for optoelectronic devices applications

Cited by 21 publications

References 220 publications

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Recent advances in density functional theory approach for optoelectronics properties of graphene

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