Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate the first continuous-wave InAs/GaAs quantum-dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A/cm 2 , a room-temperature output power exceeding 105 mW, lasing operation up to 120 o C, and over 3,100 hours of continuous-wave operating data collected, giving an extrapolated mean time to failure of over 100,158 hours. The realization of highperformance quantum-dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 10 5 cm -2 in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in-situ thermal annealing. These results are a major advance towards silicon-based photonics and photonic-electronic integration, and could provide a route towards reliable and cost-effective monolithic integration of III-V devices on silicon.Increased data throughput between silicon processors in modern information processing demands unprecedented bandwidth and low power consumption beyond the capability of conventional copper interconnects. To meet these requirements, silicon photonics has been under intensive study in recent years 1,2 . Despite rapid progress being made in silicon-based light modulation and detection technology and low-cost silicon optoelectronic integrated devices enabled by the mature CMOS technology 3,4 , an efficient reliable electrically pumped laser on a silicon substrate has remained an unrealized scientific challenge 5 . Group IV semiconductors widely used in integrated circuits, e.g. silicon and germanium, are inefficient light-emitting materials due to their indirect bandgap, introducing a major barrier to the development of silicon photonics. Integration of IIIÐV materials on a silicon platform has been one of the most promising techniques for generating coherent light on silicon. IIIÐV semiconductors with superior optical properties, acting as optical gain media, can be either bonded or epitaxially grown on silicon substrates [6][7][8][9][10][11] , with the latter approach being more attractive for large scale, low-cost, and streamlined fabrication. However, until now, material lattice mismatch and incompatible thermal expansion coefficients between IIIÐV materials and silicon substrates have fundamentally limited the monolithic growth of IIIÐV lasers on silicon substrates by introducing high-density threading dislocations (TDs) 12 .Lasers with active regions formed from III-V quantum dots (QDs), nano-size crystals, can not only offer low threshold current density (J th ) but also reduced temperature sensitivity [13][14][15][16][17] . As shown in Figure 1a, within less than 10 years, the performance of QD lasers has surpassed state-of-the-art quantum-well (QW) lasers developed over the last few decades in terms of J th . QD lasers have now been demonstrated with nearly constan...

The recent rise of metamaterials opens new opportunities for absorbers due to their designed electrodynamic properties and effects, allowing the creation of materials with effective values of permittivity and permeability that are not available in naturally occurring materials. Since their first experimental demonstration in 2008, recent literature has offered great advances in metamaterial This article is protected by copyright. All rights reserved. 2 perfect absorber (MMPA) operating at frequencies from radio to optical. Broadband absorbers are indispensable in thermophotovoltaics, photodetection, bolometry and manipulation of mechanical resonances. Although it is easy to obtain MMPA with single band or above, achieving broadband MMPA (BMMPA) remains a challenge due to the intrinsically narrow bandwidth of surface plasmon polaritons, localized surface plasmon resonances generated on metallic surfaces at nanoscale or high Q-factor in GHz region. To guide future development of BMMPA, recent progress is reviewed here: the methods to create broadband absorption and their potential applications. The four mainstream methods to achieve BMMPA are introduced, including planar and vertical element arrangements, their welding with lumped elements and the use of plasmonic nanocomposites, accompanied by the description of other, less common approaches. Following this, applications of BMMPA in solar photovoltaics, photodetection, bolometry and manipulation of mechanical resonances are reviewed. Finally, challenges and prospects are discussed.

Perovskite solar cells (PSCs) have developed rapidly over the past few years, and the power conversion efficiency of PSCs has exceeded 20%. Such high performance can be attributed to the unique properties of perovskite materials, such as high absorption over the visible range and long diffusion length. Due to the different diffusion lengths of holes and electrons, electron transporting materials (ETMs) used in PSCs play a critical role in PSCs performance. As an alternative to TiO ETM, ZnO materials have similar physical properties to TiO but with much higher electron mobility. In addition, there are many simple and facile methods to fabricate ZnO nanomaterials with low cost and energy consumption. This review focuses on recent developments in the use of ZnO ETM for PSCs. The fabrication methods of ZnO materials are briefly introduced. The influence of different ZnO ETMs on performance of PSCs is then reviewed. The limitations of ZnO ETM-based PSCs and some solutions to these challenges are also discussed. The review provides a systematic and comprehensive understanding of the influence of different ZnO ETMs on PSCs performance and potentially motivates further development of PSCs by extending the knowledge of ZnO-based PSCs to TiO -based PSCs.

Right click to open a feedback form in a new tab to let us know how this document benefits you.

No abstract