III–V nanowires and nanowire optoelectronic devices

Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

“…Nanowire-based building blocks require defect-and contamination-free materials and positioned growth for the production of complex structures like light-emitting diodes, lasers, solar cells, or transistors. [1][2][3][4][5][6] Au is preferred over other metals as the catalyst for vapor-liquid-solid (VLS) nanowire growth due to its low eutectic point with Si, Ge, or Ga. 7,8 Despite its common use, the introduction of Au into semiconductor fabrication processes is problematic, as it forms deep trap states. Traces of the catalyst were, in particular, also identified along the sidewalls of VLS-grown nanowires.…”

Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

“…This flexibility in NW design and growth has enabled novel device applications including NW lasers 10,22,23 , light emitting and detection devices 2,[24][25][26] , ultrahigh density transistors 27 single-electron charging devices 28,29 as well as single photon emitters 15,30,31 and detectors 32 .…”

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

“…Excellent properties combined with easy integration make 1D materials have great research prospects. For example, GaAs NWs in III‐V compounds, suitable direct bandgap (1.42 eV) and high photoelectric conversion efficiency make GaAs NWs have great potential in optoelectronic applications . ZnO NWs in II‐VI compounds have a wide bandgap of 3.37 eV and a high carrier mobility, which is a good material in UV PDs .…”