A review of the use of electro-thermal simulations for the analysis of heterostructure FETs

Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma

“…Here the main problem is the dramatically different scale of the regions relevant for the electrical and the thermal problem: while the former is typically in the nanometer to micrometer range, the latter often measures hundreds of micrometersthink for instance about the distance between the channel of a FET and the back-side wafer contact from which most of the heat is dissipated. This is a significant computational challenge that can be overcome with suitable techniques: an introductory review dealing with these problems can be found in [7].…”

TCAD analysis of self heating in AlGaN/GaN HEMTs under pulsed conditions

“…To predict GaN HEMT reliability effects that may be dependent on thermal gradients, the ability to model and validate electrical characteristics over temperature in RF applications is critical. Several researchers are utilizing TCAD device simulators to investigate electrical and thermal effects on compound semiconductor FETs [1,2] but only under DC conditions. Prior efforts by McGlone et al utilized the Silvaco ATLAS© 2-D device simulator to model self-heating of an AlGaN/GaN HEMT on diamond substrates by investigating the dependence of GaN mobility models and thermal resistance on the DC characteristics [2].…”

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

“…Due to the convenience for extracting thermal parameters, the electrothermal finite element method simulation is widely used. Moreover, compared with the 2D simulation, the 3D structural model has better accuracy because the 3D effects are fully considered . In addition, the simulations are very time‐saving and suitable for different‐in‐size devices to determine the thermal parameters.…”