A review of thermal characterization of power transistors

Blackburn, David L.

doi:10.1109/semthe.1988.10589

Cited by 54 publications

(29 citation statements)

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“…Fig. 1 shows the typical circuit [15] for static calibration of the threshold voltage temperature dependence curve. The IGBT module was placed on the temperature-controlled board, thereby maintaining the referent temperature within the temperature range of interest.…”

Section: B Calibration Of Threshold Voltage Temperature Dependencementioning

confidence: 99%

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Bahun¹,

Šunde²,

Jakopović³

2013

Journal of Power Electronics

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Knowledge of a power semiconductor's operating temperature is important in circuit design and converter control. Designing appropriate circuitry that does not affect regular circuit operation during virtual junction temperature measurement at actual operating conditions is a demanding task for engineers. The proposed method enables virtual junction temperature estimation with a dedicated modified gate driver circuit based on real-time measurement of a semiconductor's quasi-threshold voltage. A simulation was conducted before the circuit was designed to verify the concept and to determine the basic properties and potential drawbacks of the proposed method.

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Section: B Calibration Of Threshold Voltage Temperature Dependencementioning

confidence: 99%

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Bahun¹,

Šunde²,

Jakopović³

2013

Journal of Power Electronics

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“…Figure 7 shows basic circuit for threshold voltage measurement used for transient temperature response measurement [15], not for the measurement under real operating conditions. Only one switch is required, but in a very sensitive part of the circuit.…”

Section: Threshold Voltage Measurement Un-der Real Operating Conditionsmentioning

confidence: 99%

Real-Time Measurement of IGBT's Operating Temperature

Bahun¹,

Čobanov²,

Jakopović

2011

Automatika

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Original scientific paperTemperature management and control are among the most critical functions in power electronic devices. Knowledge of power semiconductor's operating temperature is important for circuit design, as well as for converter control. Virtual junction temperature measurement or estimation is not an easy task, therefore designing the appropriate circuitry for virtual junction temperature in the real operating conditions not affecting regular circuit operation is a demanding task for engineers. The proposed method enables virtual junction temperature estimation based on the real-time measurement of semiconductor's quasi-threshold voltage using dedicated modified gate driver circuit.Key words: IGBT, Measurement, Threshold voltage, Temperature sensitive electrical parameter Mjerenje radne temperature IGBT-a u stvarnom vremenu. Upravljanje temperaturom je jedna od najkritični-jih funkcija kod učinskih poluvodičkih komponenata. Poznavanje radne temperature učinske poluvodičke sklopke vrlo je važno pri projektiranju sklopa, kao i za upravljanje učinskim pretvaračem. Mjerenje ili estimacija nadomjesne temperature silicija nije lagan zadatak, stoga je projektiranje odgovarajućeg sklopovlja za odreivanje nadomjesne temperature silicija u stvarnim radnim uvjetima, koje ne utječe na normalan rad sklopa, vrlo zahtjevan inžen-jerski zadatak. Predložena metoda omogućava odreivanje nadomjesne temperature silicija utemeljeno na mjerenju kvazi-napona praga u stvarnom vremenu pomoću posebno prilagoenog pobudnog stupnja IGBT-a.Ključne riječi: IGBT, mjerenje, napon praga, temperaturno osjetljiv električki parametar

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“…The single pulse response of the normalized transient thermal impedance (measurement [17] or manufacturer data sheet): r versus t constitutes the reference data. …”

Section: The Transistor Package (Chip-to-case)mentioning

confidence: 99%