Phase change materials (PCMs) that can effectively improve
the
efficiency of energy storage and conversion have been used in the
field of microelectronic devices for prolonging service life. However,
conventional PCMs are easy to cause brittle fractures and damage to
microelectronic devices because of their strong rigidity, which cannot
perfectly fit the irregular surface of microelectronic devices. Herein,
we successfully synthesized a dynamic covalently cross-linked shape
memory PCM (HPCM8K) with polyethylene glycol (PEG) as the phase change
component, hexamethylene diisocyanate trimer as the crosslinking point,
and a disulfide bond as the dynamic covalent bond. The tensile strength
and the elongation at break of the designed HPCM8K-1 can reach 27.7
MPa and 853.1%, respectively; meanwhile, HPCM8K has excellent latent
heat storage capacity with the highest latent heat of 98.1 J/g. Importantly,
these HPCM8K can integrate both traditional elastic shape memory and
permanent shape reconstruction capabilities into one PEG-based dynamic
cross-linking network after introducing the disulfide bond in the
molecular structure. The key point of this work is to introduce exceptional
mechanical performance and remarkable shape memory ability into PCMs,
greatly improving the operability of shape change and enhancing their
shape adaptability for accommodating different surfaces of microelectronic
devices.