A review on GaN-based two-terminal devices grown on Si substrates

Liu, Chao; Zhu, Min; Zou, Xinbo

doi:10.1016/j.jallcom.2021.159214

Cited by 24 publications

(6 citation statements)

References 209 publications

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“…It is about an order of magnitude lower than the previously reported tin-lead-based perovskite photodetectors with a similar device configuration. [17][18][19][20]59] As shown in Figure 3d, the SR PD has a broad response window from 300 ≈ 1000 nm and attained a high responsivity of 0.52 A W -1 at 760 ≈ 900 nm which is comparable to the state-of-the-art silicon detectors 60,61 . The dark current of the photodetector is paramount for the sensitivity of weak light.…”

Section: Performances Of Strain Released Perovskite Photodetectormentioning

confidence: 79%

“…This value is comparable to commercially available silicon photodiodes at the same wavelength. [ 60,61 ]…”

Section: Resultsmentioning

confidence: 99%

“…This value is comparable to commercially available silicon photodiodes at the same wavelength. [60,61] The calculated NEP corresponding to the high D* of SR PD is 2.47 × 10 -14 W Hz -1/2 at a wavelength of 660 nm, which indicates that the photodetector should be able to detect the red-light intensity as low as 0.40 pW cm -2 . The FFT signal analyzer is used to record the total current of the SR PD at −0.1 V under different light intensities to verify whether it can detect light intensities as low as NEP.…”

Section: Performances Of Strain Released Perovskite Photodetectormentioning

confidence: 97%

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Multication Tin‐Lead Perovskite Photodiodes with Engineered Lattice Strain for Ultrasensitive Broadband Photodetection

Zou

Zhou

Liu

et al. 2022

Advanced Optical Materials

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The commercialized light-sensitive materials for PDs, such as silicon and InGaAs, are however produced by energy-consuming high-temperature methods. [6][7][8] Solutionpossessed metal halide perovskites have been exploited as low-cost alternatives that are able to present surpassing sensitivity and linear dynamic range in broad spectral regions, including the ultraviolet, visible (vis), and near-infrared (NIR). [9,10] The archetypal methylammonium lead iodide (MAPbI 3 ) perovskite has shown high sensitivity and low noise for visible light detection, but suffered from blindness in the NIR region due to the cutoff wavelength of ≈800 nm. [11,12] As an alternative, tin-lead alloyed perovskites experiencing spectral response of over 1000 nm, are particularly suitable for broadband photodetection with good electrical property and environmental stability. [13] Taking MASn x Pb 1-x I 3 as an example, the resulting optical bandgap (E g ) can be finely tuned between 1.17 ≈ 1.55 eV by changing the Sn content in the composition. [14][15][16] Nevertheless, the performance of tin-lead perovskite photodetectors (PPDs) is mostly inferior compared with the lead-based counterparts, and their versatility is normally relied on several crucial factors, including the response time, sensitivity to low brightness, detection band, and reliability, which is hard to be achieved simultaneously. [17][18][19][20][21] The strain that relates to the deformation of materials is ubiquitously existed in thin-film perovskite devices. Residual strain is usually caused by the unequal thermal expansion coefficients at the perovskite/substrate interface and could be reduced by modifying the substrates or annealing procedure. [22,23] Recent studies revealed the opposite impact of in-plane tensile and compressive strains, while the latter one was found to be beneficial for the stabilization and charge transport of hybrid perovskites. [24] Also, there is a microstrain in bulk perovskite, i.e., lattice strain, which is a measure of the lattice constant distribution arising from microscopic crystal imperfections, such as vacancy and dislocation. [25][26][27] Local lattice mismatch of perovskites would generate a large microstrain, which distorts the crystal structure by tilting, expansion, or shrinkage of the octahedral network, and even lead to phase Tin-lead alloyed perovskites with broadband absorption over 1000 nm, are suitable for UV-vis-NIR light detection that rivals the crystalline silicon semiconductors. These alloyed perovskites usually experience local lattice distortion and inherent lattice strain, which affect the electronic band structures and introduce detrimental trap states subsequently. To date, the lattice strain and its impact on the physical properties of tin-lead alloyed perovskites are still less understood. Herein, it is shown that the lattice strain contributes substantially to the band edge electronic structure of multication tin-lead alloyed perovskites by tilting the metal halide octahedral configuration. It has been found that th...

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Section: Performances Of Strain Released Perovskite Photodetectormentioning

confidence: 79%

“…This value is comparable to commercially available silicon photodiodes at the same wavelength. [ 60,61 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Performances Of Strain Released Perovskite Photodetectormentioning

confidence: 97%

See 1 more Smart Citation

Multication Tin‐Lead Perovskite Photodiodes with Engineered Lattice Strain for Ultrasensitive Broadband Photodetection

Zou

Zhou

Liu

et al. 2022

Advanced Optical Materials

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“…[10][11][12][13][14][15] Gallium nitride (GaN) is widely used as a semiconducting material in high performance UV photodetectors for its excellent optical and electrical properties, including its wide direct bandgap (3.4 eV) and high saturated electron drift velocity. [16][17][18][19][20][21][22] Moreover, AlGaN/GaN high electron mobility transistors (HEMTs), which employ a GaN-based heterostructure, can form 2D electron gas ( in highly responsive UV photodetectors. [23][24][25][26][27][28][29][30] The formation of 2-DEG with high carrier density and electron mobility due to the piezoelectric and spontaneous polarization without any intentional doping has frequently been referred to as a potential material for the next generation high power and high-frequency devices.…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Pandit

Jang

Jeong

et al. 2023

Adv Materials Inter

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The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology. However, the presence of high dark current deteriorates the photodetector performance by diminishing several figures of merit. In this work, enhanced figures of merit are demonstrated by employing interdigitated p‐GaN finger structure on the top of the AlGaN/GaN heterostructure. The commonly present high dark current in p‐GaN/AlGaN/GaN planar photodetector is largely reduced (from ≈µA to few pA) by etching the p‐GaN, excluding the electrode region. Furthermore, by using a graphene transparent electrode along with the p‐GaN interdigitated fingers on AlGaN/GaN heterostructure, ultraviolet photodetectors with superior sensitivity (3.55 × 106) and ultrahigh detectivity (1.91 × 1014 cm Hz1/2 W−1) are realized at 360 nm. A comparison of graphene/p‐GaN and Ni/Au/p‐GaN interdigitated fingers and planar p‐GaN (with interdigitated graphene contacts) all on AlGaN/GaN heterostructure allows to understand the dominant roles of electrode transparency and the heterojunction structure. The simple and high electron mobility transistor‐compatible fabrication process of UV detectors provides a unique application in the field of UV sensing technology.

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“…[1][2][3][4][5] Gallium oxide (Ga 2 O 3 ) and gallium nitride (GaN) are both wide bandgap semiconductors with energy gaps of B4.9 and B3.4 eV, respectively. 6,7 Moreover, GaN has become one of the major semiconductors in the application of electronic equipment technology after Si, GaAs and SiC, which is still extraordinarily attractive in the market. 8 GaN can achieve effective light emission in any region of UV and visible light, which is highly anticipated in the field of semiconductor luminescence.…”

Section: Introductionmentioning

confidence: 99%

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes

Zhang,

Yue,

Xiang

et al. 2023

J. Mater. Chem. C

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A review on GaN-based two-terminal devices grown on Si substrates

Cited by 24 publications

References 209 publications

Multication Tin‐Lead Perovskite Photodiodes with Engineered Lattice Strain for Ultrasensitive Broadband Photodetection

Multication Tin‐Lead Perovskite Photodiodes with Engineered Lattice Strain for Ultrasensitive Broadband Photodetection

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes

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A review on GaN-based two-terminal devices grown on Si substrates

Cited by 24 publications

References 209 publications

Multication Tin‐Lead Perovskite Photodiodes with Engineered Lattice Strain for Ultrasensitive Broadband Photodetection

Multication Tin‐Lead Perovskite Photodiodes with Engineered Lattice Strain for Ultrasensitive Broadband Photodetection

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

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Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes