A review on laser drilling and cutting of silicon

Wang, Hongjian; Yang, Tao

doi:10.1016/j.jeurceramsoc.2021.04.019

Cited by 54 publications

(20 citation statements)

References 136 publications

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“…In recent years, the non-traditional machining (NTM) processes for silicon wafers have been widely investigated and rapidly developed [11] , [12] , [13] , [14] . The commonly used NTM processes are as follows: chemical NTM methods (such as chemical wet etching method and electrochemical machining method) and thermal NTM methods (such as laser-based machining methods).…”

Section: Introductionmentioning

confidence: 99%

“…Silicon and silicon-based wafers, as a kind of brittle material, have been widely used in photovoltaic, semiconductor, medical, aerospace, and optical industries [4] , [14] . For example, to reduce pollution and the greenhouse effect through the combustion process silicon wafer is commonly used in solar cell techniques to convert solar energy into electricity [5] .…”

Section: Introductionmentioning

confidence: 99%

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Theoretical and experimental investigations on rotary ultrasonic surface micro-machining of brittle materials

Zhang

Wang

et al. 2022

Ultrasonics Sonochemistry

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental investigations on rotary ultrasonic surface micro-machining of brittle materials

Zhang

Wang

et al. 2022

Ultrasonics Sonochemistry

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“…Ablation with a thin frost layer assistance could significantly boost ablation efficiency, suppress the recast layer, and reduce the heat-affect zone [ 51 ]. Recent comprehensive reviews on the laser ablation of silicon may be found in [ 32 , 52 , 53 ].…”

Section: Introductionmentioning

confidence: 99%

Interaction Energy Dependency on Pulse Width in ns NIR Laser Scanning of Silicon

Wang

Chen

et al. 2022

Micromachines

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Laser ablation of semiconductor silicon has been extensively studied in the past few decades. In the ultrashort pulse domain, whether in the fs scale or ps scale, the pulse energy fluence threshold in the ablation of silicon is strongly dependent on the pulse width. However, in the ns pulse scale, the energy fluence threshold dependence on the pulse width is not well understood. This study elucidates the interaction energy dependency on pulse width in ns NIR laser ablation of silicon. The level of ablation or melting was determined by the pulse energy deposition rate, which was proportional to laser peak power. Shorter pulse widths with high peak power were likely to induce surface ablation, while longer pulse widths were likely to induce surface melting. The ablation threshold increased from 5.63 to 24.84 J/cm2 as the pulse width increased from 26 to 500 ns. The melting threshold increased from 3.33 to 5.76 J/cm2 as the pulse width increased from 26 to 200 ns, and then remained constant until 500 ns, the longest width investigated. Distinct from a shorter pulse width, a longer pulse width did not require a higher power level for inducing surface melting, as surface melting can be induced at a lower power with the longer heating time of a longer pulse width. The line width from surface melting was less than the focused spot size; the line appeared either as a continuous line at slow scanning speed or as isolated dots at high scanning speed. In contrast, the line width from ablation significantly exceeded the focused spot size.

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“…It is more difficult to realize the hole taper control in practical applications. The emergence of laser drilling technology provides a good solution to solve these problems in the processing of hard and brittle materials [4][5].…”

Section: Introductionmentioning

confidence: 99%

Hole taper control in femtosecond pulsed laser drilling of silicon carbide ceramic

Wang

Yang

et al. 2022

J. Phys.: Conf. Ser.

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Femtosecond pulsed laser drilling of silicon carbide (SiC) ceramic was performed to investigate effects of spiral scanning turns on hole taper control. Experimental results indicated that positive cone, cylinder and negative cone could be processed by adjusting spiral scanning turns. Although hole taper presented a decreasing trend as spiral scanning turns increased, it increased slightly at the condition of more dense paths. The changes of laser energy, debris and plasma caused by the change of spiral scanning turns were analyzed. It was worth mentioning that more spiral scanning turns meant longer drilling time, which would not only prolong the interaction between laser and materials, but also reduce the efficiency of laser drilling. On the premise of meeting the hole taper requirements, less spiral scanning turns were the preferred processing parameters. Differences of microstructure and elemental contents at hole wall were analyzed and discussed. Results indicated that contents of Si and O were higher, content of C was lower near the exit than that near the entrance.

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A review on laser drilling and cutting of silicon

Cited by 54 publications

References 136 publications

Theoretical and experimental investigations on rotary ultrasonic surface micro-machining of brittle materials

Theoretical and experimental investigations on rotary ultrasonic surface micro-machining of brittle materials

Interaction Energy Dependency on Pulse Width in ns NIR Laser Scanning of Silicon

Hole taper control in femtosecond pulsed laser drilling of silicon carbide ceramic

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