A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

Priyadarshini, Priyanka; Das, Subhashree; Naik, Ramakanta

doi:10.1039/d2ra00771a

Cited by 77 publications

(38 citation statements)

References 137 publications

(278 reference statements)

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“…However, their practical applications have been severely restricted by some inherent flaws and people’s never-ending pursuit for “perfection”. Therefore, the aggressive explorations of innovative NLO materials have aroused the curiosity of many academics. − …”

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confidence: 99%

[C(NH₂)₃]₂MoO₂F₄·H₂O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

et al. 2022

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A novel organic–inorganic hybrid guanidine fluoromolybdate, [C(NH2)3]2MoO2F4·H2O, was successfully synthesized via our proposed cation–anion synergetic interaction strategy. The title compound features a unique Chinese-knot structure constructed by hydrogen-bonding interactions, which induces an all-around improvement of the optical band gap, second-harmonic-generation effect, and phase-matchable ability compared with the reported fluoromolybdates, demonstrating that it is a promising UV nonlinear-optical material.

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mentioning

confidence: 99%

[C(NH₂)₃]₂MoO₂F₄·H₂O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

et al. 2022

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“…Figure 7 plots the measured electrical resistivity ( ρ ) of In 2 (Te 0.98 Se 0.02 ) 3 thin films and confirms the semiconducting behavior of the materials [ 39 ]. The ρ curve seemed to be higher for irradiated samples than for pristine samples, revealing the influence of SHI irradiation, which modified the surface of the materials through the grain boundaries.…”

Section: Resultsmentioning

confidence: 66%

Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In2(Te1−xSex)3 Thin Films

Pandian

Krishnaprasanth²,

Palanisamy³

et al. 2022

Nanomaterials

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Ion irradiation is an exceptionally effective approach to induce controlled surface modification/defects in semiconducting thin films. In this investigation, ion-irradiated Se–Te-based compounds exhibit electrical transport properties that greatly favor the transformation of waste heat into electricity. Enhancements of both the Seebeck coefficient (S) and the power factor (PF) of In2(Te0.98Se0.02)3 films under 120 MeV Ni9+ ion irradiation were examined. The maximum S value of the pristine film was about ~221 µVK−1. A significantly higher S value of about ~427 µVK−1 was obtained following irradiation at 1 × 1013 ions/cm2. The observed S values suggest the n-type conductivity of these films, in agreement with Hall measurements. Additionally, Ni ion irradiation increased the PF from ~1.23 to 4.91 µW/K2m, demonstrating that the irradiated films outperformed the pristine samples. This enhancement in the TE performance of the In2(Te0.98Se0.02)3 system is elucidated by irradiation-induced effects that are revealed by structural and morphological studies.

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“…The multifunctional Bi 2 ZnOB 2 O 6 single crystal is used for the SHG/THG generation process, where it is observed that it shows 3.22 × 10 −21 m 2 V −2 thirdorder nonlinear susceptibility by taking silica as the calibrating material. 66 Such films shows a higher χ (3) value (7.20 × 10 −18 ) upon annealing at 475 K. In the study presented here, χ (3) varies 4.524 × 10 −11 to 14.146 × 10 −11 esu upon annealing at higher temperatures. This increase in nonlinear susceptibility upon annealing enables its application as a frequency converter, a logic element, etc.…”

Section: Nonlinear Optical Propertiesmentioning

confidence: 54%

“…3.4.1. Nonlinear Susceptibility [χ (3) ] and Nonlinear Refractive Index (n 2 ). For chalcogenide materials, nonlinearity is one of the important properties that covers a broad portion of the electromagnetic spectrum.…”

Section: Nonlinear Optical Propertiesmentioning

confidence: 99%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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This work focuses on the structural, optical, and morphological modifications in As 20 Ag 10 Te 10 Se 60 quaternary thin films that are ∼800 nm thick upon thermal annealing at different temperatures. The structure is analyzed by Xray diffraction that reveals the phase transformation (amorphous to crystalline) due to annealing. This material's phase transition enables it to be used in memory device applications. The increase in particle size is confirmed by field emission scanning electron microscopy of the surface. The increase in particle size signifies the agglomeration occurs at higher annealing temperatures. The optical transmittance shows a red shift toward a lower photon energy as recorded by the ultraviolet−visible spectrometer. The optical bandgap of the films decreases (1.84 to 1.72 eV), whereas the refractive index increases as calculated from the Swanepoel method. The decrease in the bandgap is attributed to the increases in the localized states. The amorphous to crystalline transition results in a significant increase in the third-order nonlinear susceptibility (from 4.524 × 10 −11 to 14.146 × 10 −11 esu). The nonlinear refractive index is found to increase from 5.385 × 10 −10 to 14.786 × 10 −10 esu upon annealing. The static and high-frequency dielectric constant increases with the increase in oscillator and dispersion energy. The observed changes are explained on the basis of phase transformation and the density of defect states. The enhanced value of the nonlinear refractive index with a reduced optical electronegativity and carrier concentration with annealing is useful for nonlinear optical devices.

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A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

Abstract: The schematic presentation of some metal-doped chalcogenide thin films.

Cited by 77 publications

References 137 publications

[C(NH₂)₃]₂MoO₂F₄·H₂O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

[C(NH₂)₃]₂MoO₂F₄·H₂O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In2(Te1−xSex)3 Thin Films

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

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A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

Abstract: The schematic presentation of some metal-doped chalcogenide thin films.

Cited by 77 publications

References 137 publications

[C(NH2)3]2MoO2F4·H2O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

[C(NH2)3]2MoO2F4·H2O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In2(Te1−xSex)3 Thin Films

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

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[C(NH₂)₃]₂MoO₂F₄·H₂O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

[C(NH₂)₃]₂MoO₂F₄·H₂O: Unique Chinese-Knot Structure Revealing Superior Nonlinear-Optical Properties

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications