A Review on the Recent Advancements in Tin Oxide-Based Thin-Film Transistors for Large-Area Electronics

Jenifer, K.; Arulkumar, S.; Parthiban, S.; Kwon, Jang Yeon

doi:10.1007/s11664-020-08531-x

Cited by 36 publications

(20 citation statements)

References 70 publications

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“…Comparing to the previous results, Li-doped SnO 2 TFTs show similar or higher field effect mobility and comparable negative bias stability. The reported Si-and Ga-doped SnO 2 based TFTs show higher FEM and the Si-doped SnO 2 based TFTs show the better NBS properties [31]. Corresponding to deposition method, the crystallinity, chemical composition, and carrier concentration were changed.…”

Section: Resultsmentioning

confidence: 99%

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Kim

Lee

et al. 2021

Electronics

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In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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Section: Resultsmentioning

confidence: 99%

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Kim

Lee

et al. 2021

Electronics

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“…Notably, the electronic structure of Sn 4+ (4d 10 5s 2 ) is similar to that of In 3+ (4d 10 5s 0 ) with the spherical symmetry s orbit, leading to the high mobility of SnO 2 and In 2 O 3 even in an amorphous state [7,8]. In addition, Sn is abundant (2.2 ppm) and relatively inexpensive (~$15/kg) [6]. SnO 2 is also non-toxic, environmentally friendly, and chemically stable, making it the most promising candidate to replace In-based MOS materials in semiconductor devices such as TFTs.…”

Section: Introductionmentioning

confidence: 98%

“…In recent years, due to their high mobility, low temperature preparation, and compatibility with flexible processes, metal oxide semiconductor (MOS) materials represented by indium gallium zinc oxide (IGZO) have been extensively applied in flat panel displays such as AMLCD and AMOLED, driven by TFTs [1][2][3][4][5]. However, the scarce reserve of indium in the earth's crust (0.25 ppm) leads to its high market price (~$750/kg) [6]. Furthermore, it is toxic, which makes it incompatible with the trend of the consumer electronics market toward low cost environmental benignity.…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate

Zhang

Wei³

et al. 2022

Membranes

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Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10−10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

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“…Generally, a FET has bottom-gate and top-gate geometries depending on the position of the source-drain electrodes and gate electrodes such as top gate (top contact), bottom gate (back channel-etch), bottom gate (coplanar) and bottom gate (etch stopper). 20 , 55 In the case of a Bio-FET, the metal gate/insulator interface accommodates an immobilized biological sensing membrane. The semiconducting channel is in contact with electrolyte solution through the gate electrode.…”

Section: Introductionmentioning

confidence: 99%

Nanomaterial-Based Biosensors using Field-Effect Transistors: A Review

Manimekala

Sivasubramanian

Dharmalingam

2022

J. Electron. Mater.

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Field-effect transistor biosensors (Bio-FET) have attracted great interest in recent years owing to their distinctive properties like high sensitivity, good selectivity, and easy integration into portable and wearable electronic devices. Bio-FET performance mainly relies on the constituent components such as the bio-recognition layer and the transducer, which ensures device stability, sensitivity, and lifetime. Nanomaterial-based Bio-FETs are excellent candidates for biosensing applications. This review discusses the basic concepts, function, and working principles of Bio-FETs, and focuses on the progress of recent research in Bio-FETs in the sensing of neurotransmitters, glucose, nucleic acids, proteins, viruses, and cancer biomarkers using nanomaterials. Finally, challenges in the development of Bio-FETs, as well as an outlook on the prospects of nano Bio-FET-based sensing in various fields, are discussed.

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A Review on the Recent Advancements in Tin Oxide-Based Thin-Film Transistors for Large-Area Electronics

Cited by 36 publications

References 70 publications

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate

Nanomaterial-Based Biosensors using Field-Effect Transistors: A Review

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