A ring-VCO-based injection-locked frequency multiplier using a new pulse generation technique in 65 nm CMOS

Kanemaru, Norifumi; Ikeda, Sho; Kamimura, Tatsuya; Lee, Sangyeop; Tanoi, Satoru; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

doi:10.1109/isocc.2011.6138639

Cited by 15 publications

(6 citation statements)

References 7 publications

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“…The ILFM alone consumes 8.1 mW, and the power consumptions of the ILFM with the input ILRO together is 18 mW at 1.8 V. Fig. 9 compares the performance of the proposed ILFM with recent published frequency multipliers [3]- [7], [9]- [13]. As can be seen, the ILROs [7], [9] have wider locking range and smaller area than the LC ILOs [3]- [6].…”

Section: Prototype Experimental Resultsmentioning

confidence: 99%

“…1-a. In [7], for example, a small duty-cycle pulse is generated, which contains a large number of harmonics, and then used to injection-lock the ring oscillator whose free-running frequency is near the desired harmonic. However, directly injecting a harmonic-rich signal into the ring oscillator may result in many strong harmonic components in the output, especially at low frequency, because the ring oscillator without inductors has lowpass rather than bandpass filtering characteristic.…”

Section: Introductionmentioning

confidence: 99%

“…1. Prior ring oscillator based ILFM topologies: (a) A single-input ILRO similar to [7]. (b) A multiphase ILRO similar to [9].…”

Section: Introductionmentioning

confidence: 99%

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A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

Çiftçioğlu

2013

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference

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This paper presents a new injection-locked frequency multiplier (ILFM) designed to achieve wide locking range and low power dissipation. The ILFM is constructed using an injection-locked ring oscillator (ILRO) without any inductors. It is injection-locked at each ILRO stage by an injection signal, which is generated by the harmonic generation integrated in each stage from the input signal, with a progressive phase shift. The multiphase injection locking scheme and built-in harmonic generation improve the injection efficiency, increase the locking range, and reduce the power consumption. A multiply-by-2 ILFM prototype is implemented on a test chip using 130-nm CMOS. The measured locking range is 116% (4-15 GHz) with 0.3-V input amplitude. The ILFM prototype consumes 8 mW at 1.8 V, and occupies a chip area less than 0.01 mm 2 .

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Section: Prototype Experimental Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

Çiftçioğlu

2013

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference

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“…As an injection-locked oscillator, a circuit using a ring oscillator [14,15,16,17,18,19] and an LC oscillator [20,21,22,23,24,25,26,27,28,29,30,31,32] can be considered. A ring oscillator has a wider locking range than an LC oscillator, however, in the case of an injection-locked ring oscillator, it is difficult to achieve high-frequency operation due to it depending on the delay of the transistor.…”

Section: Introductionmentioning

confidence: 99%

Study of 18.2-42.0GHz injection-locked frequency doubler with transformer input

Hashimoto

Kaneda

Komoku

et al. 2023

IEICE Electron. Express

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This paper presents ultra-wideband 18.2-42.0 GHz LC injectionlocked frequency doubler (ILFD) with transformer inputs. To expand the locking range, the proposed ILFD incorporates the transformer connected to the source of the gain-cell transistor to obtain high linearity of the input circuitry, moreover, the input matching frequency shifts from the free-run frequency of the oscillator. The measured maximum locking range exhibited 79.1% from 18.2 GHz to 42.0 GHz output at 0 dBm input power and the locked phase noise at 1MHz offset from 28 GHz carrier frequency was −112.1 dBc/Hz under 1.7 mW power consumption. Also, the lowest locked phase noise at 1 MHz offset from the carrier was −122.8 dBc/Hz under 21.2 mW power consumption, and it was only 2.2 dB degraded from the theoretical value. The process technology used in this work was TSMC-180nm CMOS.

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“…In particular, ring voltage-controlled oscillator (VCO)-based ILFMs can achieve both a low phase noise and a small chip area. [11][12][13] However, ILFMs have a tradeoff between output frequency resolution and phase noise. The output frequency of conventional ILFMs ( f out ) are only integral-multiplied by the reference frequency ( f ref ), i.e., f out ¼ f ref ; 2 Â f ref ; 3 Â f ref ; .…”

Section: Introductionmentioning

confidence: 99%

Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator

Ikeda

Lee

Kamimura

et al. 2013

Jpn. J. Appl. Phys.

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In this paper, we present a fractionally injection-locked frequency multiplication technique that can solve the tradeoff between the selectable frequency step and phase noise of injection-locked frequency multipliers (ILFMs). For a given output frequency step, the phase noise of the proposed ILFM is lower than that of conventional ILFMs because higher-frequency signals can be injected. The proposed ILFM was fabricated using a 180 nm Si complementary metal oxide semiconductor (CMOS) process. 1/2-, 1/3-, 1/4-, and 1/6-integral frequency multiplications were realized, which means that the output frequency resolution is 6 times as high as that of conventional ILFM. When the reference frequency was 100 MHz, the measured phase noise at 725 (= 100×29/4) MHz was -120 dBc/Hz at a 1 MHz offset, and that at 767 (= 100×23/3) MHz was -119 dBc/Hz at 1 MHz offset.

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A ring-VCO-based injection-locked frequency multiplier using a new pulse generation technique in 65 nm CMOS

Cited by 15 publications

References 7 publications

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

Study of 18.2-42.0GHz injection-locked frequency doubler with transformer input

Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator

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A ring-VCO-based injection-locked frequency multiplier using a new pulse generation technique in 65 nm CMOS

Cited by 15 publications

References 7 publications

A 4&#x2013;15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

A 4&#x2013;15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

Study of 18.2-42.0GHz injection-locked frequency doubler with transformer input

Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator

Contact Info

Product

Resources

About

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation