A robust MEMS probe card with vertical guide for a fine pitch test

Kim, Bong-Hwan; Kim, Hyeon‐Cheol; Choi, Soon-Don; Chun, Kukjin; Kim, Jong-Bok; Kim, Jong-Hyun

doi:10.1088/0960-1317/17/7/018

Cited by 30 publications

(30 citation statements)

References 25 publications

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“…The waferlevel test is the first step in the device manufacturing process, where chips fabricated on a bare wafer are subjected to standardized tests by using the input/output (I/O) terminals of the chips in order to determine defective chips before the packaging process [3]. During the wafer-level test, an individual chip is tested by using a probe card with micro-probes.…”

Section: Introductionmentioning

confidence: 99%

MEMS-based Ni–B probe with enhanced mechanical properties for fine pitch testing

Kim

Kwon

Ahn

et al. 2017

Micro and Nano Syst Lett

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We fabricated and characterized microelectromechanical systems (MEMS)-based Ni-B probes with enhanced mechanical properties for fine pitch testing. The Ni-B micro-probes were compared with conventional Ni-Co microprobes in terms of the mechanical performance and thermal effect. The elastic modulus and hardness of Ni-B were found to be 240.4 and 10.9 GPa, respectively, which surpass those of Ni-Co. The Ni-B micro-probes had a higher contact force than the Ni-Co micro-probes by an average of 41.38% owing to the higher elastic modulus. The Ni-B micro-probes had a lower average permanent deformation than the Ni-Co micro-probes after the same overdrive was applied for 1 h by 56.58 µm. The temperature was found to have a negligible effect on the Ni-B micro-probes. These results show that Ni-B micro-probes are useful for fine pitch testing and a potential candidate for replacing conventional Ni-Co micro-probes owing to their advanced mechanical and thermal characteristics.

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Section: Introductionmentioning

confidence: 99%

MEMS-based Ni–B probe with enhanced mechanical properties for fine pitch testing

Kim

Kwon

Ahn

et al. 2017

Micro and Nano Syst Lett

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“…Probe cards are classified as horizontal (Kim et al 2007;Park et al 2002) and vertical (Hauck et al 2010;Lin et al 2010;Jim 2011;Lee and Sadrabadi 2011;Armendariz and Tong 2011) according to the probe arrangement method. A horizontal probe card is restricted to the device types with the pads of lead on center (LOC) or lead on top edge (LOTE), because the procedure of fabrication remains manual and the probe is long.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a guide block for measuring a device with fine pitch area-arrayed solder bumps

Choi

Ryu

2012

Microsyst Technol

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This paper describes the design and fabrication of a guide block and micro probes, which were used for a vertical probe card to test a chip with area-arrayed solder bumps. The size of the fabricated guide block was 10 mm 9 6 mm. The guide block consisted of 172 holes to insert micro probes, 2 guide holes for exact alignment, and 4 holes for bolting between the guide block and the housing of a PCB. Pitch and size of the inserting holes were 80 lm, and 90 lm 9 30 lm, respectively. A silicon on insulator wafer was used as the substrate of the guide block to reduce micro probes insertion error. The micro probes were made of nickel-cobalt (Ni-Co) alloy using an electroplating method. The length and thickness of the micro probes were 910 and 20 lm, respectively. A vertical probe card assembled with the fabricated guide block and micro probes showed good x-y alignment and planarity errors within ±4 and ±3 lm, respectively. In addition, average leakage current and contact resistance were approximately 0.35 nA and 0.378 ohm, respectively. The proposed guide block and micro probes can be applied to a vertical probe card to test a chip with area-arrayed solder bumps.

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“…On the other hand, a MEMS probe is fabricated on silicon wafer using MEMS technology, and then bonded on the ceramic circuit board. MEMS probe card is widely used in testing of memory device, but it is hard to test the area or peripheral array pads (Leung 1999;Kim 2003;Kim et al 2007).…”

Section: Introductionmentioning

confidence: 99%

A MEMS guide plate for a high temperature testing of a wafer level packaged die wafer

Choi¹,

Ryu

2010

Microsyst Technol

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This paper describes the design and fabrication of a MEMS guide plate, which was used for a vertical probe card to test a wafer level packaged die wafer. The size of the fabricated MEMS guide plate was 10.6 9 10.6 cm. The MEMS guide plate consisted of 8,192 holes to insert pogo pins, and four holes for bolting between the guide plate and the housing. To insert pogo pins easily, an inclined plane was defined at the back of each hole. Pitch and diameter of the hole were 650 and 260 lm, respectively. In order to define inserting holes and inclined planes at an exact position, silicon MEMS technology was used such as anisotropic etching, deep reactive etching and more. Silicon was used as the material of the guide plate to reduce alignment mismatch between the pogo pins and solder bumps during a high temperature testing. A combined probe card with the fabricated MEMS guide plate showed good x-y alignment and planarity errors within ±9 and ±10 lm at room temperature, respectively. In addition, x-y alignment and planarity are ±20 and ±16 lm at 125°C, respectively. The proposed MEMS guide plate can be applied to a vertical probe card for burn-in testing of a wafer level packaged die wafer because the thermal expansion coefficient of the MEMS guide plate and die wafer is same.

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A robust MEMS probe card with vertical guide for a fine pitch test

Cited by 30 publications

References 25 publications

MEMS-based Ni–B probe with enhanced mechanical properties for fine pitch testing

MEMS-based Ni–B probe with enhanced mechanical properties for fine pitch testing

Fabrication of a guide block for measuring a device with fine pitch area-arrayed solder bumps

A MEMS guide plate for a high temperature testing of a wafer level packaged die wafer

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