A RRAM-Based True Random Number Generator with 2T1R Architecture for Hardware Security Applications

The constrained minimization (respectively maximization) of directed distances and of related generalized entropies is a fundamental task in information theory as well as in the adjacent fields of statistics, machine learning, artificial intelligence, signal processing and pattern recognition. In our previous paper "A precise bare simulation approach to the minimization of some distances. I. Foundations", we obtained such kind of constrained optima by a new dimension-free precise bare (pure) simulation method, provided basically that (i) the underlying directed distance is of f −divergence type, and that (ii) this can be connected to a light-tailed probability distribution in a certain manner. In the present paper, we extend this approach such that constrained optimization problems of a very huge amount of directed distances and generalized entropies -and beyond -can be tackled by a newly developed dimension-free extended bare simulation method, for obtaining both optima as well as optimizers. Almost no assumptions (like convexity) on the set of constraints are needed, within our discrete setup of arbitrary dimension, and our method is precise (i.e., converges in the limit). For instance, we cover constrained optimizations of arbitrary f −divergences, Bregman distances, scaled Bregman distances and weighted ℓr−distances. The potential for wide-spread applicability is indicated, too; in particular, we deliver many recent references for uses of the involved distances/divergences in various different research fields (which may also serve as an interdisciplinary interface).

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“…( 136) respectively ( 137)). Based on (157), one can (for fixed n) approximate the corresponding empirical maximum by…”

Section: E Maximization Via Base-divergence-methodsmentioning

confidence: 99%

A Precise Bare Simulation Approach to the Minimization of Some Distances. I. Foundations

Broniatowski¹,

Stummer

2023

IEEE Trans. Inform. Theory

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Atomic Layer Deposition Films for Resistive Random‐Access Memories

Hao,

Peng,

Zierold

et al. 2024

Adv Materials Technologies

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Resistive random‐access memory (RRAM) stands out as a promising memory technology due to its ease of operation, high speed, affordability, exceptional stability, and potential to enable smaller memory devices with sizes under 10 nm. This has drawn significant attention, with atomic layer deposition (ALD) emerging as an ideal technology to tackle the challenges of nanoscale fabrication in the micro‐ and nanomanufacturing industry. ALD offers technological advantages such as functional multiple‐layer stacking, doping capabilities, and incorporating oxygen reservoirs or reactive layers. These factors contribute to achieving more intriguing, stable, and reliable nonvolatile resistance switching behaviors in RRAM. Specifically, ALD greatly benefits RRAM, that relies on the valence change mechanism, where high‐k transition metal oxides are commonly used as switching materials, and precise control over oxygen vacancies is achievable. This review provides a comprehensive overview of ALD films used in RRAM, delves into resistive switching properties and microscopic mechanisms in binary and ternary oxides and nitrides, and explores the impact of ALD‐prepared electrodes. Furthermore, the current status and future prospects of ALD‐based RRAM are highlighted, which is poised to catalyze further advancements in the fields of information storage and neural networks.

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The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process

Nivetha,

Bindu,

Noor Ain

2024

Microelectronic Engineering

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A RRAM-Based True Random Number Generator with 2T1R Architecture for Hardware Security Applications

Cited by 3 publications

References 23 publications

A Precise Bare Simulation Approach to the Minimization of Some Distances. I. Foundations

A Precise Bare Simulation Approach to the Minimization of Some Distances. I. Foundations

Atomic Layer Deposition Films for Resistive Random‐Access Memories

The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process

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