International Technical Digest on Electron Devices Meeting 1992
DOI: 10.1109/iedm.1992.307317
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A S-VHS compatible 1/3" 720(H)*588(V) FT-CCD with low dark current by surface pinning

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Cited by 8 publications
(4 citation statements)
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“…for "blue" as for "green" packets, implying no charge mixing occurs (from large green to small blue signals). The reason for this is that at the default VPS setting of 6 V, the Si-SiO interface under the blocking gates is inverted with holes [9]. The electrons will recombine and are thus lost: this explains why the charge loss of the large packets will not influence the neighboring small packets.…”
Section: Influence Of Transport Clock Voltage and Frequencymentioning
confidence: 99%
“…for "blue" as for "green" packets, implying no charge mixing occurs (from large green to small blue signals). The reason for this is that at the default VPS setting of 6 V, the Si-SiO interface under the blocking gates is inverted with holes [9]. The electrons will recombine and are thus lost: this explains why the charge loss of the large packets will not influence the neighboring small packets.…”
Section: Influence Of Transport Clock Voltage and Frequencymentioning
confidence: 99%
“…an increase compared to conventional VAB imagers [3] from 2500 to 10000 electrons per fim' effective electrode area. T h e vertical antiblooming structure handles highlights well above 1000 times overexposure, and electronic shutter action is achieved as before.…”
Section: 33mentioning
confidence: 91%
“…For a 4-phase, 1 / 3 " FT-CCD pixel with vertical anti-blooming (VAB) operating in conventional interlaced mode [ 3 ] , t,his yields (6.9 pm -2.0pm) x 6.3 pm = 31 p m 2 . The maximum chargc capacity Q,,,, of this pixel is in the order of 80 000 electrons.…”
Section: Charge Storage Capacitymentioning
confidence: 99%
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