High power consumption of nonvolatile memory is a major
challenge,
as it reduces the memory efficiency of information storage devices.
The magnetoelectric (ME) coupling in multiferroic nanocomposites,
which can be utilized in magnetoelectric random access memory, is
an effective approach to reduce power consumption in information storage.
Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients
for piezoelectric thin films. Specifically, the ME voltage coefficient
of the P(VDF-TrFE)/Fe3O4 composite developed
in this study is 8.97 mV/(cm·Oe), which is 17.5% higher compared
to that of the pure P(VDF-TrFE) at a H
dc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites
is characterized by the increase of diffraction peak intensity at
a microscopic level. The nanocomposite films exhibit high ME voltage
coefficients and information storage performance, providing a great
potential for creating next-generation memory devices in the realm
of artificial intelligence and wearable devices.