A Scalable, General Purpose Circuit Model for Vanadium Compensated, Semi-Insulating, Vertical 6H-SiC PCSS

Zhao, Yunfei; Wu, Qilin; Xun, Tao; Wang, Langning; Yang, Hanwu

doi:10.1109/tcsii.2020.3021831

Cited by 12 publications

(6 citation statements)

References 18 publications

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“…However, when the carrier lifetime is too long, it may affect the high-frequency response ability of the PCSS, resulting in longer tail of the output single pulse waveform and poorer modulation of the pulse cluster waveform [28]. The deep-level doping of semiconductor will help to achieve the semi-insulating characteristics of PCSS, but the carrier lifetime will decrease with the increase of doping, thus reducing the photoelectric conversion efficiency of photoconductive switches [29]. Therefore, reasonable doping should be used to regulate the carrier lifetime, so as to increase the photoelectric conversion efficiency while maintaining good frequency response ability.…”

Section: Photoelectric Conversion Efficiency Under High Electric Fieldmentioning

confidence: 99%

“…In addition, we can increase the optical path of light transmission within the substrate by changing the mode of light incidence, such as adding the transparent AZO electrode layer under the Ag mirror to form AZO/SiC/AZO/Ag structure [16] or utilizing light capture structure to form total internal reflection [30], thereby improving the light absorption efficiency. We can also reasonably control the doping concentration so that as many electrons or holes as possible are excited by laser, improving quantum efficiency and finally increasing the photoelectric conversion efficiency [29].…”

Section: Photoelectric Conversion Efficiency Under High Electric Fieldmentioning

confidence: 99%

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Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Zeng,

Wang,

Niu

et al. 2024

IEEE J. Electron Devices Soc.

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Vertical extrinsic photoconductive semiconductor switches (PCSSs) are presented with initial characteristics comparison between V-doped 4H-SiC and Fe-doped GaN PCSS under axial triggering such as dark resistance, photoconductivity, power output, and breakdown behavior. Experiments are carried out under the 532-nm-wavelength laser with mJ-level energy and a pulse width of 30 ns. Photoconductive experiments show that the photoelectric conversion efficiency of GaN PCSS is 2.27 times higher than 4H-SiC PCSS with the same electric field strength under different laser energies from 1 mJ to 5 mJ. 4H-SiC PCSS with a dark-state resistance of 10 12 Ω • cm can withstand a bias voltage of 8 kV (16 kV/mm) and laser energy of 8 mJ and the maximum output power is up to 428.7 kW, while that of GaN can only stand a bias voltage of 1 kV (2.9 kV/mm) because of low dark resistance and defect. Obvious cracks of 4H-SiC PCSS can be observed from the breakdown image after breakdown occurs, while the dark-state resistance of GaN PCSS drops from 10 6 Ω•cm to 10 4 Ω•cm under high DC voltage.

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Section: Photoelectric Conversion Efficiency Under High Electric Fieldmentioning

confidence: 99%

Section: Photoelectric Conversion Efficiency Under High Electric Fieldmentioning

confidence: 99%

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Zeng,

Wang,

Niu

et al. 2024

IEEE J. Electron Devices Soc.

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“…Figure 3 shows the macroscopic (circuit) model [45][46][47] of a typical PCSD. The carrier lifetime τ r is determined by the time constant, which is obtained by the convolution of the resistorcapacitor (RC) parallel circuits.…”

Section: Equivalent Models For the Linear-mode Pcsdsmentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability. Over the past several years, benefitting from the sustainable innovations in laser technology and the significant progress in materials technology, megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices. Here, we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode, including the mechanism, system architecture, critical technology, and experimental demonstration of the proposed high-power photonic microwave sources. The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

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“…To accurately measure the on-state resistance of a PCSS based on VCSI 4H-SiC, the impedance of the test circuit, including PCSS and a 0.0249-Ω CVR was analyzed and extracted photoconductivity of 4H-SiC substrate [19]. Another work conducted an equivalent circuit analysis for the test circuit including a load resistance of 100-Ω in series with a 0.1-Ω CVR [20]. By estimating the capacitance of the VCSI 6H-SiC based PCSS and the circuit inductance, PSpice model for PCSS was developed to accurately simulate the output waveform of the PCSS circuit triggered by double optical pulses with a time interval.…”

Section: Introductionmentioning

confidence: 99%

Output Characteristics of Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Choi

Kim

et al. 2022

IEEE Access

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Photoconductive semiconductor switch (PCSS) allowing side illumination was fabricated on high purity semi-insulating (HPSI) 4H-SiC. A 532-nm pulsed laser with variable optical energy was used to trigger the PCSS. The performance of the PCSS was characterized under the two different load conditions, 50-Ω load and 0.05-Ω, with a current viewing resistor (CVR). The PCSS exhibited significantly different output characteristics for the two different loads. The equivalent resistance of the PCSS with the 50-Ω load, which was calculated from the output voltage and current, was inversely proportional to the optical energy, but the one with a 0.05-Ω load exhibited saturation behavior with the optical energy. While the times at peak output with the 50-Ω load were similar at various optical energies, the times at peak output with the 0.05-Ω load were dependent on the optical energy. Output current oscillation was also observed after the PCSS was turned off in the case of 0.05-Ω load condition. The different output characteristics for the different load resistances were analyzed using the transient response of the equivalent circuits. The PCSS exhibited a minimum on-state resistance of 0.27 Ω with the optical energy of 8 mJ and a maximum output current of 657 A at the bias voltage of 4.8 kV. The operating voltage of the PCSS was limited by surface flashover, which caused an additional output pulse following the first output pulse.

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A Scalable, General Purpose Circuit Model for Vanadium Compensated, Semi-Insulating, Vertical 6H-SiC PCSS

Cited by 12 publications

References 18 publications

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Output Characteristics of Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

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