A Scalable Model for Snapback Characteristics of Circuit-Level ESD Simulation

Shen, Zilong; Wang, Yi–Ze; Li, Yunhao; Zhang, Xing; Yuan, Wang

doi:10.1109/tcsii.2021.3123838

Cited by 3 publications

(1 citation statement)

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“…In recent years, researchers have proposed ESD device behavioral models that do not consider the gate control mechanism, aiming to simulate the snapback behavior of conventional ESD devices [5]. Shen et al proposed a new model based on GGNMOS that utilizes a voltage-controlled current source to study the avalanche breakdown effect, enabling the simulation of the snapback behavior of GGNMOS devices [6]. PA Juliano et al proposed a method for modeling the circuit behavior of controllable silicon devices, enabling the simulation of conventional unidirectional SCR devices [7].…”

Section: Introductionmentioning

confidence: 99%

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Bao,

Wang,

Liu

et al. 2024

Eng. Res. Express

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This paper delineates the implementation of a gate-controlled Silicon Controlled Rectifier (SCR) behavioral model using Cadence software. The model is designed to tackle the absence of gate-control effect characteristics in extant models. This enables more precise simulation of the snapback behavior of such gate-controlled SCR devices under electrostatic discharge (ESD) stress. This work fabricates three types of SCR devices: Traditional SCR(T-SCR), Single-Gate SCR (SG-SCR), and a Double-Gate SCR (DG-SCR). These devices are fabricated using the 0.18µm CMOS process and varied in the number of gates. The physical principles of the device are validated through two-dimensional electrical simulations. Furthermore, the model results are confirmed by the transmission line pulse (TLP) test results of the final device. The results demonstrate that the simulation results of the gate-controlled SCR behavioral model fit the TLP test results of the three SCR devices. The model's applicability across different number of fingers devices confirms its scalability. Further, the model was simulated with the HBM equivalent circuit, and the comparison with the actual results confirmed the model's applicability to HBM simulation.

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Section: Introductionmentioning

confidence: 99%