A selective epitaxy collector module for high-speed Si/SiGe:C HBTs

Geynet, B.; Chevalier, P.; Brossard, F.; Vandelle, B.; Schwartzmann, T.; Buczko, M.; Avenier, G.; Dutartre, D.; Dambrine, G.; Danneville, F.; Chantre, A.

doi:10.1016/j.sse.2009.04.025

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…In the realm of III-V HBTs, it seems unrealistic to expect such a decrease of (R B + R E )/β due to the limited current gain β of high-speed III-V DHBTs. This stands in marked contrast to the situation in SiGe HBTs which can feature much higher current gain values β > 1000 [13]. We therefore expect that it will be difficult for InP/GaAsSb DHBTs to attain NF min < 1 dB at low frequencies.…”

Section: Discussionmentioning

confidence: 77%

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Zeng

Ostinelli

Lovblom

et al. 2010

IEEE Electron Device Lett.

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We report self-aligned 0.3-µm emitter InP/GaAsSb/ InP DHBTs featuring a common-emitter current gain of 46 and cutoff frequencies f T = 400 GHz and f MAX = 322 GHz for devices implemented with a 20-nm C-doped base and a 75-nm InP collector. Our DHBTs display attractive noise properties with a minimum noise figure NF min = 1.2 dB at 20 GHz, which is nearly independent of frequency over the 2-20-GHz measurement band. This represents an improvement of at least 2.3 dB with respect to previously published results for GaAsSb-based devices, due to process improvements that allow good RF characteristics to be maintained at the low current levels required for low noise operation. Analysis shows that the low-frequency NF min is limited by the relatively low current gain values typical of III-V HBTs. InP/GaAsSb DHBTs could be attractive low-noise devices for higher frequencies.Index Terms-Double heterojunction bipolar transistors (DHBTs), InP/GaAsSb, millimeter-wave transistors, minimum noise figure.

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Section: Discussionmentioning

confidence: 77%

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Zeng

Ostinelli

Lovblom

et al. 2010

IEEE Electron Device Lett.

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“…Currently, device engineers mostly devote their efforts to improving BV CEO at the expense of f T . [5][6][7][8][9][10] In this paper, a novel composite of P + and N − doping layers deep in the CB space-charge region (SCR) readjusts the electric field near the CB metallurgical junction to lower the electron temperature, consequently suppressing the impact ionization, which improves BV CEO with little degradation in f T , and thus improves the well-known tradeoff between the breakdown voltage and the cut-off frequency in the SiGe HBT.…”

Section: Introductionmentioning

confidence: 99%

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

Zhang

Jin

et al. 2014

Chinese Phys. B

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Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBT

Zhang

Jin

et al. 2015

J. Semicond.

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Compared with BVCEO, BVCES is more related to collector optimization and more practical significance, so that BVCES × fT rather than BVCEO × fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVCES × fT and BVCEO × fT, a novel thin composite of N− and P+ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT, and BVCES and BVCEO are improved respectively with slight degradation in fT. As a result, the BVCES × fT product is improved from 537.57 to 556.4 GHz·V, and the BVCEO × fT product is improved from 309.51 to 326.35 GHz·V.

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A selective epitaxy collector module for high-speed Si/SiGe:C HBTs

Cited by 6 publications

References 5 publications

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBT

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