A self-bias NAND gate and its application to non-overlapping clock generator for extremely low-voltage CMOS LSIs

Self Cite

This paper presents a recursive stacking body-bias NAND for extremely low voltage application. Our proposed NAND utilizes recursive-stacking and body-bias techniques to achieve extremely low-voltage operation. The former suppresses off-leakage current of MOSFETs and enhances the voltage gain of the NAND gate. The latter achieves on-current enhancement and the voltage gain improvement of the NAND gate. Performance improvements of our proposed NAND gate are theoretically analyzed and discussed. Simulation of our proposed NAND gates showed that voltage transfer curves, voltage gains, and voltage swings were improved significantly. A prototype chip was fabricated in a 180 nm CMOS process and demonstrated that the voltage swing of the proposed NAND was 44.1 mV at 50 mV power supply, which was 16.4 mV improvement compared to that of the standard NAND gate, at the cost of area, power, and delay time.

“…These were caused by the body bias technique. 24) Figure 9 shows the simulated voltage gain of the NANDs. The voltage gain of 3RS-NAND was higher than that of conventional NAND.…”

Section: Simulation Resultsmentioning

confidence: 99%

Section: Proposed Nand Gatesmentioning

confidence: 99%

Section: Proposed Nand Gatesmentioning

confidence: 99%

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Sub-50 mV power supply, recursive stacking body bias NAND gate for extremely low-voltage CMOS LSIs

Sumi,

Sebe,

Kanemoto

et al. 2024

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“…[1][2][3][4][5][6][7][8][9][10][11] Energy harvesting has attracted attention as an alternative power source of batteries. [12][13][14][15][16][17][18][19][20][21][22][23][24] However, the output voltage and power of small energy harvesters are basically weak and easily lost, while the operating voltage of IoT devices will be 1.2 V or higher and the current consumption in IoT devices will be in the ranges from several nA to several hundred μA. 2) Thus, a power management system (PMS) is necessary for stable and sustainable operation.…”

Section: Introductionmentioning

confidence: 99%

Ultra-low power low-dropout linear regulator with a load current tracking bias current generator for loT devices

Mizuno,

Sebe,

Kanemoto

et al. 2024

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This paper presents an ultra-low power low-dropout (LDO) linear regulator with a load current tracking bias current generator. The proposed LDO employs the load current tracking bias current generator to achieve stable and ultra-low power operation. The measurement results demonstrated that the proposed LDO produced a 1.2-V output and achieved 78-nA quiescent current, 145-mV/mA load regulation, and 2.2-mV/V line regulation.

“…1, are widely used to operate application circuits and systems stably because the output voltages of small energy harvesters are usually low and easily lost. [14][15][16][17][18][19][20][21][22] The systems store surplus energy in a storage battery 23) and use it as needed. The stored energy must be regulated to a certain voltage (e.g.…”

Section: Introductionmentioning

confidence: 99%

Switched-capacitor voltage buck converter with variable step-down and switching frequency controllers for low-power and high-efficiency IoT devices

Matsuzuka

Kanzaki

Matsumoto

et al. 2023

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This paper proposes a switched-capacitor voltage buck converter (SC-VBC) with variable step-down controller (VSC) and switching frequency controller (SFC). The VSC and SFC change the step-down ratio and switching frequency of the SC-VBC in accordance with the input voltage and load current, respectively, enabling the converter to operate eﬃciently with a wide-ranging input voltage and load current. Measurements of a prototype chip demonstrated that our SC-VBC achieved a wide input voltage range and high eﬃciency of 1.3 – 2.6 V and 69%, respectively.