A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Abstract

The development of high‐performance, self‐powered ultraviolet (UV) photodetectors (PDs) is of utmost interest for military and industrial applications. Herein, a novel design scheme for enhancing the performance of self‐powered PDs based on the p–n heterojunction is proposed. The device architecture is engineered by integrating a nanostructured SnO2 layer into the n‐SnO2/p‐Si heterojunction. The resulting device yields an impressively high photoresponsivity of 22.73 A W−1, a large external quantum efficiency of 9065 %, and an outstanding detectivity of 1.57 × 1013 Jones at −5 V for 311 nm. Notably, the PDs possess self‐powered characteristics with an extremely high photoresponsivity of 208 mA W−1 and detectivity of 1.17 × 1012 Jones toward 311 nm without any power supply, suggesting their high potential for future energy‐efficient, self‐powered, high‐performance UV‐detecting application.

Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor

“…It is worth mentioning that, Ma et al reported a broadband photodetector and shown enhanced UV photodetection performance based on a Ga 2 O 3 /BFO heterojunction [19]. Thereinto, the heterojunction photodetectors are extensively studied for achieving selfpowered operation mode due to the formation of built-in electrical field at the heterointerface [20].…”

Structural, optical properties of V2O5 and NiO thin films and fabrication of V2O5/NiO heterojunction

“…According to conventional heterojunction theory [53,54], the expression for depletion layer capacitance is given by, e e e e = + -…”

High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction

“…Here, the values of N c and N v are 3.716 × 10 18 and 1.04 × 10 19 cm −3 , respectively [42,46]. In addition, the values of the built-in potentials on the n-side (V dn ) and p-side (V dp ) components can be calculated by formulas (10) and (11), respectively [42] V…”

“…In a simple way, a p-n heterojunction can be formed by depositing MO x on a semiconductor substrate, which provides a promising structure for photodiodes, solar cells, photodetectors, and sensors [4][5][6][7][8][9][10]. In particular, MO x semiconductors can be employed as an n-type emitter layer for developing the UV p-n heterojunction photodetectors (HPDs) owing to their advantages, including intrinsic visible-blind property, high radiation resistance, and excellent transparency in visible region [11][12][13].…”