In this work, a solar-blind UV photodetector array is fabricated and discussed, based on a metalorganic chemical vapor deposition-grown β-Ga2O3 thin film, toward optical communication application. The high-performance photodetector unit shows a significant photo-to-dark current ratio of 3.4 × 105, a high responsivity of 61.3 A/W, an external quantum efficiency of 3 × 104%, a specific detectivity of 5.2 × 1014 Jones, and a fast response time of 35 ms. In addition, a solar-blind UV/visible light rejection ratio of 2.43 × 102 is achieved, suggesting decent spectral selectivity. For the array, the maximum photocurrent standard deviation is below 12% for every group with a similar layout arrangement. Furthermore, the dark current is at picoampere level, leading to low background noise for the optical communication system. Taking the 50% photocurrent value as the readout threshold line to avoid interference from the exterior meanwhile retaining about 500 on/off cycles, the optical communicated result shows effective outputting information “NJUPT2023” coming from a total of 256 “1” and “0” signals.

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Gallium oxide (Ga2O3) is a representative of ultra-wide bandgap semiconductor, with a bandgap of about 4.9 eV. In addition to a large dielectric constant, excellent physical and chemical stability, Ga2O3 has a breakdown electric field strength of more than 8 MV/cm, which is 27 times than that of Si and about twice larger than that of SiC and GaN. It is guaranteed that Ga2O3 has irreplaceable applications in ultra-high power (1-10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga2O3, only unipolar Ga2O3power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progresses and important achievements of the state-of-the-arts Ga2O3 based power SBDs, and provide staged guidance for the further development of Ga2O3 power devices. The multiple type of device architectures, including basic structure, edge terminal processing, field plated, trench and heterojunction p-n structure, will be

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