Study of Nonthermal-Equilibrium Carrier Recombination and Transport in β–Ga₂O₃Metal–Semiconductor–Metal Deep-Ultraviolet Photodetectors

Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector

“…2(d), the photocurrent as a function of the light intensity with various bias voltages is presented. According to a power law [27]: I photo ∼ kP θ , where I photo is the photocurrent, k is a constant, and P is the light intensity. The linearity can be represented by the value of θ .…”

“…(a)-(e). The response time can be extracted by I = I 0 + Ae −t τ[27], where I 0 is the stable state I photo , A is a constant, t is the time, and τ is a time constant. The rise and decay time (τ r and τ d ) of the β-Ga 2 O 3 /AlN sensor without external voltage are also displayed in Fig.6(a)-(e).…”

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

“…The ultrawide E g of Ga 2 O 3 makes it highly suitable for fabricating solar-blind ultraviolet photodetectors, which operate in the solar-blind ultraviolet waveband (200–280 nm, also known as UV–C) . These photodetectors vary according to their structures, including metal–semiconductor–metals (MSMs), heterojunctions, Schottky barrier diodes (SBDs), and others . Besides, they can work as a single device or together as an array. − Such a diversity of the device structure is possible because Ga 2 O 3 exists in five crystalline phases, α, β, γ, δ, and ε, all of which can be grown using various techniques, including laser molecular beam epitaxy (laser-MBE), pulsed laser deposition (PLD), magnetron sputtering, metal–organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), halide vapor-phase epitaxy (HVPE), and mist chemical vapor deposition (mist-CVD), providing a convenient way for its development in relevant devices.…”

“…2 The ultrawide E g of Ga 2 O 3 makes it highly suitable for fabricating solar-blind ultraviolet photodetectors, which operate in the solar-blind ultraviolet waveband (200−280 nm, also known as UV−C). 3 These photodetectors vary according to their structures, including metal−semiconductor−metals (MSMs), 4 heterojunctions, 5 Schottky barrier diodes (SBDs), 6 and others. 7 Besides, they can work as a single device or together as an array.…”

Highly-rectified hybrid p-MAPbBr3/n-GaN heterojunction ultraviolet photodetector featuring high-photoresponse

“…In recent times, various types of UV photodetectors have been successfully proposed, showcasing promising sensing capabilities. These include metal-semiconductor-metal (MSM) photoconductors [2,3], homojunctions/ heterojunctions [4][5][6][7][8], Schottky photodiodes [9,10], and field-effect transistors [11,12]. The p-n heterojunction configuration has shown promising performance due to its remarkable features such as low dark current and high rectification ratio.…”