A Semiclassical Approach to the Electron Gas in Two-Dimensional Semiconductor Structures

Quang, Doan Nhat; Tung, Nguyen Huyen

doi:10.1002/(sici)1521-3951(199805)207:1<111::aid-pssb111>3.0.co;2-p

Cited by 23 publications

(14 citation statements)

References 24 publications

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“…Finally, the high-energy resolution and luminosity of the electron analyzer allowed us to study the shape of the feature. From comparison with recent calculations 15,16 we derived evidence of the broadening of the 2DEG density of states due to the random fields set up by the ionized AM atoms at the surface, already known to produce a strong inhomogeneity of the surface band bending. 17…”

Section: Introductionmentioning

confidence: 96%

Photoemission investigation of the alkali-metal-induced two-dimensional electron gas at theSi(111)(1×1):Hsurface

Biagi¹,

Fantini²,

Renzi³

et al. 2003

Phys. Rev. B

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We investigate the formation of a two-dimensional electron gas ͑2DEG͒ at the hydrogen-passivated silicon ͑111͒ surface exposed to tiny amounts of alkali metals ͑K and Cs͒ by means of high-resolution ultraviolet photoemission spectroscopy. The accumulation layer derives from the quantization and filling of bulk states located around the conduction-band minimum. Direct photoemission from these states results in a well-defined and structureless feature, which becomes huge when the alkali metal is deposited at low temperature ͑150 K͒, indicating a much higher charge transfer associated with the growth at low temperature. Its shape is characterized by a tail which is attributed to the broadening of the 2DEG density of states due to the random fields set up by the ionized alkali metal at the surface, providing direct experimental evidence of tailing of twodimensional subbands at a free semiconductor surface.

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Section: Introductionmentioning

confidence: 96%

Photoemission investigation of the alkali-metal-induced two-dimensional electron gas at theSi(111)(1×1):Hsurface

Biagi¹,

Fantini²,

Renzi³

et al. 2003

Phys. Rev. B

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“…It was shown that [21] for taking into account the ionic correlation, we have to incorporate an appropriate correlation factor (less than unity) into the autocorrelation function as follows [12] |U…”

Section: Iii1 Inonized Dopantsmentioning

confidence: 72%

Electron Mobility in an Unintentionally Doped GaN/AlGaN Surface Quantum Well

Minh¹

2012

Comm. in Phys.

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Abstract. We present a theoretical study the two-dimensional electron gas 2DEG at low temperature in an unintentionally doped GaN/AlGaN surface quantum well, taking adequate account of the roughness-induced scattering mechansms and effect due to sheet polarization charges. Within model of surface quantum wells 2DEG be described by an extended Fang-Howard wave function, we are able to derive an analytic expression for the self-consistent Hartree potential. Thus, we obtained simple expresion describing the enhancement of the 2DEG screening and unscreened potentials for different scattering sources. We studied the electron mobility due to different scattering sources and the total electron mobility in an unintentionally doped GaN/AlGaN surface quantum well.

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“…As a result, their distribution in space tends to be more homogeneous, so their average field is weakened. 25,26) The ACF of the correlated impurities is proven [27][28][29] to be reduced by some factor,…”

Section: Basic Equationsmentioning

confidence: 99%

“…For instance, following eqs. (14) and (29), the rate of SR scattering exhibits a quadratic dependence on the interface value of the wave function. Then, in accordance with the modification of the wave function in 2S-and 1S-doped samples, mentioned above (Fig.…”

Section: Mobility Enhancementmentioning

confidence: 99%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

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We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former is smaller than the latter for scattering from the bottom (substrate-side) interface. The mobility of a 2S-doped square QW exhibits a well-width evolution slower than the power-of-six law characteristic of the undoped QW. The mobility may be enhanced by 2S doping. We examine the dependence of the enhancement factor on QW parameters for optimization of the structure. This factor may achieve an order of magnitude, which is much larger than that provided by earlier methods. Our theory is able to reproduce recent experimental data on transport in 2S-doped narrow square QWs, e.g., the mobility dependence on well width and the enhancement factor, which have not been explained so far.

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A Semiclassical Approach to the Electron Gas in Two-Dimensional Semiconductor Structures

Cited by 23 publications

References 24 publications

Photoemission investigation of the alkali-metal-induced two-dimensional electron gas at theSi(111)(1×1):Hsurface

Photoemission investigation of the alkali-metal-induced two-dimensional electron gas at theSi(111)(1×1):Hsurface

Electron Mobility in an Unintentionally Doped GaN/AlGaN Surface Quantum Well

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

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