A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$

Based on a drift current model, along the channel current of MM20 model, an approved SOI LDMOS compact model is presented in this paper. A continued and concise expression of the presented model for easily analysis of harmonic balance, which considers the quasi-saturation effect of SOI LDMOS and short channel effect, are observed. Comparison of simulated results of DC I-V and transform characteristic for the presented model with measured data are made, which shows they are well agreed, and this model is verified.

show abstract

“…due to its characteristics of low cost, easily integration and competitive Silicon based process [1][2][3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

Improved compact channel current model of power radio frequency SOI LDMOS for CAD tools

Cao

Zeng

Jia

et al. 2012

International Conference on Automatic Control and Artificial Intelligence (ACAI 2012)

View full text Add to dashboard Cite

show abstract

“…Meanwhile Silicon-on-insulator lateral double-diffused metal-oxide-semiconductors (SOI LDMOSs) can be used as cost-effective and reliable power transistors with good linearity; they have received particular interest for use in radio frequency power amplifiers, a critical component of all wireless system-on-achip applications. [1][2][3] Isolated by a buried box layer, SOI LDMOS field effect transistors (FETs) have benefits such as a reduced leakage current, reduced parasitic capacitance, and reduced cross-talk via the substrate. However, LDMOS devices based on SOI technology have some disadvantages, such as their self-heating effect (SHE) and kink effect.…”

mentioning

confidence: 99%

Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers

et al. 2017

View full text Add to dashboard Cite

The use of contact etching stop layer (CESL) stressors is a popular technique for introducing stress into a transistor channel. However, when tensile stress is applied to an n-type lateral double-diffused metal-oxide-semiconductor (LDMOS) by covering the whole device with a CESL, the drift region adjacent to the channel will be compressively strained, which is detrimental to device performance. The current work presents a strained partial silicon-on-insulator LDMOS in which tensile stress was introduced in both the channel and drift region via a CESL to reduce the device’s on-resistance and improve its frequency performance. An n-type LDMOS device with a top-layer Si thickness that was varied between 300 and 20 nm was simulated to investigate the effect of CESLs on device performance. Devices in which the channel and drift region were fully strained had larger carrier mobilities, and their cut-off frequencies were increased by 25% compared with a normal unstrained partial silicon-on-insulator LDMOS field effect transistor. Meanwhile stress was shown to have little impact on the breakdown voltage of the two types of LDMOS field effect transistor studied here.

show abstract

RF transistors: Recent developments and roadmap toward terahertz applications

Schwierz

Liou

2007

Solid-State Electronics

109

View full text Add to dashboard Cite

A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$

Cited by 11 publications

References 16 publications

Improved compact channel current model of power radio frequency SOI LDMOS for CAD tools

Improved compact channel current model of power radio frequency SOI LDMOS for CAD tools

Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers

RF transistors: Recent developments and roadmap toward terahertz applications

Contact Info

Product

Resources

About