A-Si:H solar cells using the hot-wire technique-how to exceed efficiencies of 10%

Bauer, S.; Herbst, W.; Schröder, Bernd

doi:10.1109/pvsc.1997.654190

Cited by 5 publications

(6 citation statements)

References 6 publications

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“…Thus, the present initial η value reported here for the HW device is not yet as good as its GD counterpart. Further, the 9.8% value is also not too different from a recent initial value reported for a p-i-n device using a HW i-layer [16]. However, two important distinctions must be made.…”

Section: Resultscontrasting

confidence: 49%

“…Second, whereas the HW device in Ref. 16 used an i-layer deposited at a relatively low T s , we have persisted in attempting to incorporate the high T s HW i-layers into a device structure, because it is these high T s layers that we believe have the potential of showing a reduced Staebler-Wronski metastability in a commercially viable device structure, and not just in a simple test structure [7].…”

Section: Resultsmentioning

confidence: 99%

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H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

Mahan¹,

Iwaniczko²,

Wang³

et al. 1998

MRS Proc.

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. Hydrogen out-diffusion from the n/i interface region plays a major role in controlling the fill factor (FF) and resultant efficiency of n-i-p a-Si:H devices, with the i-layer deposited at high substrate temperatures by the hot wire technique. Modeling calculations have shown that a thin, highly defective layer at this interface, perhaps caused by significant H out-diffusion and incomplete lattice reconstruction, results in sharply lower device FFs due to the large voltage dropped across this defective layer. We have therefore employed buffer layers designed to retard this out-diffusion. We find that an increased H content, either in the n-layer or a thin intrinsic low temperature buffer layer, does not significantly retard this out-diffusion, as observed by SIMS H profiles on devices. However, if this low temperature buffer layer is thick enough, the out-diffusion is minimized, yielding nearly flat H profiles and a much improved device performance. We discuss this behavior in the context of the H chemical potentials and H diffusion coefficients in the high temperature, buffer, n-, and stainless steel substrate layers. Finally, we report a 9.8% initial active area device, fabricated at 16.5Å/s, using the insights obtained in this study. Light soaking data are also reported.

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Section: Resultscontrasting

confidence: 49%

Section: Resultsmentioning

confidence: 99%

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

Mahan¹,

Iwaniczko²,

Wang³

et al. 1998

MRS Proc.

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“…[1][2][3][4] The process involves the catalytic decomposition of the feed gases over a resistively heated filament followed by a deposition of a layer on a substrate kept in an evacuated chamber. When silane or a silane/hydrogen mixture are used as feed gases, films ranging from amorphous to polycrystalline hydrogenated silicon can be obtained by proper control of the deposition parameters such as the hydrogen dilution ratio in the silane gas, 5 the substrate and filament temperature 4,6 and the process pressure. Hydrogenated nanocrystalline silicon (nc-Si:H)-based devices have been reported to be more stable than their amorphous (a-Si:H) counterparts.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Halindintwali¹,

Knoesen²,

Swanepoel³

et al. 2010

S Afr J Sci

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“…This fact can be related to the high hydrogen concentration in the samples, which is in the range of 12-13% for the amorphous samples and around 7 % for the nanocrystalline ones. A reduction of the hydrogen content in the samples requires changes in the technological parameters such as an increase in the substrate temperature [2] or hydrogen dilution [3]. At temperatures above 1750ºC, the optical properties exhibited a nanocrystalline behaviour of the samples, in agreement with the structural properties.…”

Section: Optical Propertiesmentioning

confidence: 59%

“…Thin silicon films ranging from amorphous (a-Si:H) to nanocrystalline (nc-Si:H) can be obtained by HWCVD by properly tuning the deposition conditions. This transition has been achieved by varying different technological parameters such as hydrogen dilution [3], substrate temperature [2] and process pressure. In this work we focus on the transition under the variation of the filament temperature (T f ).…”

Section: Introductionmentioning

confidence: 99%

Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD

et al. 2001

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In this paper we present results on silicon thin films deposited by Hot-Wire CVD at low substrate temperature (200ºC). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800ºC. A crystalline fraction of 50% was obtained for the sample deposited at 1700ºC. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtention of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by Plasma-Enhanced CVD due to a higher hydrogen incorporation (13%).

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A-Si:H solar cells using the hot-wire technique-how to exceed efficiencies of 10%

Cited by 5 publications

References 6 publications

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers

Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD

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