A SiC 8 Bit DAC at 400°C

Rahman, Ashfaqur; Roy, Sajib; Murphree, Robert; Mantooth, H. Alan; Francis, A. Matthew; Holmes, James

doi:10.1109/wipda.2015.7369325

Cited by 13 publications

(3 citation statements)

References 24 publications

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“…A decade ago, Raytheon Systems Limited developed a proprietary 1.2 μm SiC CMOS technology, called high temperature silicon carbide (HiTSiC), and demonstrated integrated circuits [14], [15]. The group of Mantooth at the University of Arkansas demonstrated a comparator [16], 8-bit digitalto-analog converter (DAC) [17], voltage and current references [18], gate driver [19], complex digital circuits [20], protection circuits in voltage regulators and switch-mode converters [21], digitally controlled pulsewidth modulation (PWM) generator [22], and data converters [23]. However, the HiTSiC technology was discontinued in 2018.…”

Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

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Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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“…The UA group has designed and tested both 8-bit digital-to-analog (DAC) and analog-todigital converters in the Raytheon HiTSiC process. Figure 4 shows the schematic of the 8-bit R-2R ladder DAC from (24). This circuit was tested up to 400 C with the maximum measured differential non-linearity (DNL) of 2 LSB (least significant bit) and the integral non-linearity is 4.…”

Section: Sic Cmos Design Examplesmentioning

confidence: 99%

(Invited) Wide Bandgap Analog and Mixed-Signal IC Design for Advanced Power Electronics

Mantooth

2017

ECS Trans.

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Economy and performance are benefits that come with high power density power electronics, just as in the case of VLSI electronics. High density power electronics require the heterogeneous integration of disparate technologies including power semiconductor devices, driver, protection and control circuitry, passives and voltage isolation techniques into single modules. Such integration activity was central to the Google Little Box Challenge competition conducted last year. One of the keys to advancing power electronic integration has been the commercial reality of wide bandgap power semiconductor devices made from silicon carbide and gallium nitride. The ability to design and manufacture wide bandgap integrated circuits as drivers, controllers, and protection circuitry allows them to be packaged in close proximity to the power device die to minimize parasitics that would adversely impact system performance. These impacts include excessive ringing, noise generation, power loss, and, potentially, self-destruction. This talk will describe the state of the art in wide bandgap analog and mixed-signal IC design including example circuits such as amplifiers, data converters, controllers, and protection circuits and their integration into power electronic platforms. A synthesis tool under development for heterogeneous power circuit layout will be briefly described as a capstone to the application space descriptions.

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“…Hence, as a precaution, other circuits like the op amp have been tested only up to 400 °C and have been found to operate over multiple temperature cycles without issues. Test results of the comparator up to 450 °C were reported in [27] as part of an 8-bit digital-to-analog converter. Other wide temperature comparators reported in the literature include a silicon on insulator (SOI) comparator that operates from -20 °C to 125 °C [28] and a GaN-based comparator built with enhancement mode HEMTs operating at 250 °C [29].…”

Section: B Sic Cmos and High Temperature Applicationsmentioning

confidence: 99%

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

Rahman

Roy

Murphree

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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1 1 Abstract-This paper describes a high temperature voltage comparator and an operational amplifier in a 1.2 µm silicon carbide CMOS process. These circuits are used as building blocks for designing a high temperature SiC low-side over current protection circuit. The over current protection circuit is used in the protection circuitry of a SiC FET gate driver in power converter applications. The op amp and the comparator have been tested at 400 °C and 550 °C temperature respectively. The op amp has an input common-mode range of 0-11.2 V, DC gain of 60 dB, unity gain bandwidth of 2.3 MHz and a phase margin of 48° at 400 °C. The comparator has a rise time and a fall time of 38 ns and 24 ns, respectively, at 550 °C. The over current protection circuit, implemented with these analog building blocks, is designed to sense a voltage across a sense resistor up to 0.5 V. Keywords-comparator, op amp, current sensor, silicon carbide, high temperature electronics, wide bandgap ICs. I.K. Addington is with the

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A SiC 8 Bit DAC at 400°C

Cited by 13 publications

References 24 publications

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

(Invited) Wide Bandgap Analog and Mixed-Signal IC Design for Advanced Power Electronics

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

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