A SiC sidewall enhanced trench JBS diode with improved forward performance

Abstract

A new high-performance sidewall enhanced trench junction barrier Schottky (SET-JBS) diode is proposed in this article. In the proposed SET-JBS diode, in addition to the Schottky contact on the top anode, the sidewall of the trenches also introduces Schottky contacts, which not only increases the Schottky contact area, but also weakens the JFET (Junction Field-Effect Transistor) effect of the device, resulting in a high forward current density and a low specific on-resistance (R on,sp) with a small increase in reverse leakage current (J L). Simulation results show that the R on,sp of the proposed SET-JBS diode is reduced by 21.6% to 46.7% with less than an order of magnitude increase in leakage current compared with that of the conventional trench JBS (T-JBS) diode when the trench distance is from 2.1μm to 1.2 μm at the 2μm trench depth. And the SET-JBS diode also performs better than the trench MOS barrier Schottky (TMBS) diode when comprehensively considered the R on,sp and J L. And the figure of merit (FOM) and the trade-off relationship between the R on,sp and the breakdown voltage of the proposed SET-JBS both are better than those of the conventional T-JBS diode and TMBS diode. The forward I-V analytical model of the SET-JBS is also proposed, which is in good agreement with the simulation results. All the simulation results indicate that the proposed SET-JBS diode has promising potential in power electronics applications.

New Electronic Devices for Power Converters

“…Unfortunately, the T-JBS structure introduces a severe JFET (junction field-effect transistor) effect, which greatly reduces the on-state current density. And the sidewall-enhanced JBS (SET-JBS) diode was proposed to alleviate the JFET effect and increase the Schottky contact area, resulting in an improvement in current density [5]. high-power rectifiers and field-effect transistors [6,7].…”

“…Figure 9. (a) SiC trench JBS (T-JBS) diode, (b) SiC sidewall enhanced JBS diode (SET-JBS), and (c) static characteristic comparison of different Schottky diodes[5].…”

High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure

“…[14,15] On the other hand, the T-JBS diode introduces a strong depletion region along the sidewall of mesa between the trenches, which suppresses the forward current path and reduces the forward current density. [16,17] In previous work [18] a sidewall enhanced trench JBS (SET-JBS) SiC diode was proposed to increase the Schottky contact area and reduce the junction field-effect transistor (JFET) effect, resulting in the enhancement in forward current density and the specific on-resistance. However, it mainly focused on the forward current-voltage analytical model with mesa width as the parameter.…”

“…On the other hand, the SiC SET-JBS requires 12-µm-thick drift layer to realize 1500 V and 3 mΩ•cm 2 . [18] 2. Device structure and parameters cm −3 in hole density), the p − -diamond drift region (3 µm in thickness and 1 ×10 16 cm −3 in hole density), and the n-diamond regions, which exist in the trenches.…”