A SiCl4 reactive ion etching and laser reflectometry process for HBT fabrication

Granier, Hugues; Tasselli, Josiane; Marty, A.; Hu, Hiep Pham

doi:10.1016/s0042-207x(96)00178-9

Cited by 8 publications

(2 citation statements)

References 3 publications

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“…[11] Therefore, the real-time, in situ, non-contact, and direct sensing of controlled parameters is urgently needed. Some efficient techniques, such as reflectance anisotropy spectroscopy, [12][13][14] instance laser interferometry and reflectometry, [15] optical emission spectroscopy, [16] mass spectrometry of the residual gas, [17] have been employed for the etching depth monitoring and end-point detection. Nonetheless, a more efficient PCM approach that simultaneously measures multiple physical parameters of the structures is highly desirable.…”

Section: Introductionmentioning

confidence: 99%

Terahertz Barcodes Enabled by All‐Silicon Metasurfaces for Process Control and Monitoring Applications

Zhang

Sun

et al. 2023

Adv Materials Technologies

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Process control and monitoring (PCM) is crucial for the quality control and yield improvement of semiconductor products. Terahertz inspection of semiconductor devices has been of interest since the progress of terahertz spectroscopic techniques. However, due to the diffraction limit, high‐resolution measurement of geometric sizes and multiple parameter monitoring are challenging for terahertz PCM techniques. In this article, XX present terahertz all‐dielectric metasurfaces as the interface on a silicon substrate for monitoring material properties and fabrication errors in the silicon deep reactive ion etching (DRIE) process. It is shown that four different metasurfaces can encode multiple information simultaneously, including the carrier density of silicon substrates, etching depth and linewidth error, forming a terahertz barcode for PCM. By correlating the measured reflection spectra of the barcode with those in the simulation database, the three parameters are retrieved with a mean square error (MSE) of ≈0.5. The results indicate that this proposed technique using emerging artificial photonic materials as PCM structures paves a pathway toward high‐efficiency semiconductor quality control and other sensing applications.

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Section: Introductionmentioning

confidence: 99%

Terahertz Barcodes Enabled by All‐Silicon Metasurfaces for Process Control and Monitoring Applications

Zhang

Sun

et al. 2023

Adv Materials Technologies

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“…Other techniques are based on surface analysis. Those are mostly optical, for instance (laser) interferometry and reflectometry [16–17] or (spectroscopic) ellipsometry [18]. Also, combinations of several techniques are applied [19–21].…”

Section: Introductionmentioning

confidence: 99%

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Kleinschmidt¹,

Barzen²,

Strassner³

et al. 2016

Beilstein J. Nanotechnol.

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Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

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Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Barzen

Richter

Fouckhardt

et al. 2015

Applied Surface Science

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A SiCl4 reactive ion etching and laser reflectometry process for HBT fabrication

Cited by 8 publications

References 3 publications

Terahertz Barcodes Enabled by All‐Silicon Metasurfaces for Process Control and Monitoring Applications

Terahertz Barcodes Enabled by All‐Silicon Metasurfaces for Process Control and Monitoring Applications

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

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