A SiGe-bipolar down-conversion mixer for a UMTS zero-IF receiver

Pretl, Harald; Schelmbauer, W.; Adler, B.; Maurer, Linus; Fenk, J.; Weigel, Robert

doi:10.1109/bipol.2000.886170

Cited by 8 publications

(1 citation statement)

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“…SiGe (silicon germanium) bipolar technology is an attractive solution for the receiver front-end [25], [26]. The described IC includes a fully-integrated VCO together with a dual-modulus prescaler, the quadrature phase generation circuitry, the mixer, a low-noise baseband amplifier and a low-pass blocking filter.…”

Section: Rfics For Umts: Current Developmentsmentioning

confidence: 99%

System-defined design and performance of RFICs for W-CDMA mobile radio terminals

Maurer¹,

Lanschutzer²,

Springer³

et al. 2001

Elektrotech. Inftech.

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Third generation wideband CDMA (W-CDMA) systems like UMTS will add broadband data to support video, Intemet access, and other high speed services for untethered devices. They are currently deployed in Japan and will be introduced in Europe in 2002. Despite sufficient RF performance has been assumed in the standardization bodies, especially in mobile devices the RF part is still a limiting factor for the overall system characteristics. Only an integral design approach including both RF and baseband functionalities makes it possible to achieve analog front-ends with sufficient performance. This paper reviews transceiver architectures with respect to W-CDMA and presents some of the recent silicon-based radio frequency integrated circuits for mobile terminals.

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Section: Rfics For Umts: Current Developmentsmentioning

confidence: 99%