A SiGe HBT $D$ -Band LNA With Butterworth Response and Noise Reduction Technique

Turkmen, Esref; Burak, Abdurrahman; Guner, Alper; Kalyoncu, İlker; Kaynak, Mehmet; Gürbüz, Yaşar

doi:10.1109/lmwc.2018.2831450

Cited by 38 publications

(14 citation statements)

References 12 publications

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“…Although [280] had better NF and P dc than [305], its IIP 3 , A V and S 11 were worse. Meanwhile, other BiCMOS designs had higher P dc (11.7 to 95 mW) while some of them even had higher NF or lower A V [163,166,213,237,253,272,279,296,310,320,324,330,336,352].…”

Section: Optimum Work Of the 2010smentioning

confidence: 99%

“…-212, 214-221, 223, 225-236, 238, 240, 242-252, 254, 256-262, 264, 266-268, 270, 271, 273-277, 282, 283, 285-293, 295, 298, 302- 309, 311, 312, 314, 315, 317-319, 321, 322, 325-328, 331-333, 335, 337-341, 346-351, 355-358, 360], the BiCMOS[163,166,213,237,253,272,279,280,296,305,310,320,324,330,336,352] and the HEMT[174, 186, 187, 191, 222, 241, 255, 284, 294, 298-301, 313, 323, 329, 342-345, 353, 359].…”

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confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Optimum Work Of the 2010smentioning

confidence: 99%

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confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…Compared to the frequency-reconfigurable LNAs with two RF-MEMS switches [8], [9], it is more compact (because the bias and RF-MEMS circuits barely scale with frequency), and exhibits a simpler configuration and a lower P DC . It is also considerably more compact than the (notreconfigurable) LNAs in [1], [3] [5], [7], which operate at comparable frequencies. The proposed LNA was designed to feature a well-balanced gain and noise figure in both states at the expense of lower gain and higher P DC .…”

Section: Lna Design and Implementationmentioning

confidence: 99%

A 125–143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

Heredia

Ribó

Pradell

et al. 2019

IEEE Microw. Wireless Compon. Lett.

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In this letter, a 125 to 143 GHz frequencyreconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-µm SiGe:C BiCMOS process which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 dB and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. Measured results are in good agreement with simulations. Index Terms-frequency-reconfigurable LNA, multimodal circuit, RF-MEMS switch.

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“…The SiGe BiCMOS technology has demonstrated maturity and high performance for D-band wireless systems and sensors [2,7,8]. Recent advances in 0.13 µm SiGe BiCMOS hetero junction bipolar transistor (HBT) devices [9] have enabled the development of fixed-frequency LNAs using two to four HBT stages, typically in a cascode configuration [1,10,11,12,13,14,15,16,17], featuring a high gain G ( G = 24 dB at 158 GHz [1]) and low noise figure F ( F = 5.1 dB at 144.5 GHz [14]). Other silicon technologies, such as 65- and 28-nm SOI CMOS, are also being used to fabricate D-band LNAs [18,19,20], featuring comparable gain but a higher noise figure ( G = 15.7 dB and F = 8.5 dB at 160 GHz [20]).…”

Section: Introductionmentioning

confidence: 99%

“…Regarding miniaturization, the frequency-reconfigurable D-band LNA presented in [17] exhibits both, the smallest chip area, A CHIP , and core area (without RF- and DC-pads), A CORE , compared to the other D-band LNAs [1,10,11,12,13,14]. In [17], the RF-MEMS switch area is 0.031 mm 2 , which supposes a 29% of A CORE ( A CORE = 0.107 mm 2 ).…”

Section: Introductionmentioning

confidence: 99%

Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

et al. 2019

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A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.

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A SiGe HBT $D$ -Band LNA With Butterworth Response and Noise Reduction Technique

Cited by 38 publications

References 12 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

A 125–143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

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