2002
DOI: 10.1002/1521-4095(20020517)14:10<736::aid-adma736>3.0.co;2-9
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A Silicon Nanowire with a Coulomb Blockade Effect at Room Temperature

Abstract: An extremely narrow and thin silicon wire has been fabricated on a silicon‐on‐insulator wafer (see Figure). The room‐temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single‐electron transistors.

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Cited by 24 publications
(11 citation statements)
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“…The phenomenon could be explained as the Coulomb blockade effect of ZIF-8@GO. The ZIF-8@GO nanoparticles could cause a high charging energy for the tunneling electrons and inhibit the charge transfer through the whole system from migrating directionally, reducing the conduction loss which represents the flow of charge through the dielectric materials [ 55 , 56 ].…”
Section: Resultsmentioning
confidence: 99%
“…The phenomenon could be explained as the Coulomb blockade effect of ZIF-8@GO. The ZIF-8@GO nanoparticles could cause a high charging energy for the tunneling electrons and inhibit the charge transfer through the whole system from migrating directionally, reducing the conduction loss which represents the flow of charge through the dielectric materials [ 55 , 56 ].…”
Section: Resultsmentioning
confidence: 99%
“…While tightly-confined single-electron systems based on NWs have been extensively demonstrated [19][20][21], their tunability has so far been limited and it has not been possible to indefinitely scale their dimensions and operating temperature because NWs with diameters below ≈ 20 nm quickly become insulating due to carrier depleted induced by quantum confinement. Various approaches to high-temperature Coulomb blockade, based for instance on ultranarrow etched Si wires [22,23], have been demonstrated in the past. The InAs/InP NW technology, however, still offers an unmatched level of control and flexibility for what concerns the dot properties as well as its electronic filling.Here we demonstrate that an electrical dipole moment can be used to easily manipulate the orbitals of an InAs/InP quantum dot and to dramatically modify its energy spectrum.…”
mentioning
confidence: 99%
“…This leaves a limited margin for the enhancement of the dot’s working temperature through bare scaling. Various approaches to high-temperature Coulomb blockade, based for instance on ultranarrow etched Si wires, , were demonstrated in the recent past. The InAs/InP NW approach, however, still offers an unmatched level of control and flexibility for what concerns the dot properties as well as its electronic filling.…”
mentioning
confidence: 99%
“…Progress in the synthesis of size-controlled nanomaterials has enabled a better understanding of the size-dependent electrical, optical, and magnetic properties of individual nanostructures of semiconductors, metals, , and other materials. , Beyond size control in the preparation of nanomaterials, the greater challenge is to control the assembly of individual nanoparticles (or nanowires, etc.) into hierarchically structured architectures so that their position in a complex matrix is determined.…”
mentioning
confidence: 99%