A silicon quantum wire transistor with one-dimensional subband effects

Je, Minkyu; Han, Sangyeon; Kim, Ilgweon; Shin, Hyungcheol

doi:10.1016/s0038-1101(00)00191-x

Cited by 38 publications

(15 citation statements)

References 9 publications

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“…For this reason, silicon nanowires, which allow multi-gate or gate-all-around transistors, are being explored. [2][3][4][5][6][7] In Ref. [2], the authors reported a parallel wire channel transistor, whose channel can be viewed as a wire with a triangular cross-section.…”

Section: Introductionmentioning

confidence: 99%

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Wang

Polizzi

Lundstrom

2004

Journal of Applied Physics

347

237

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Probing a single nuclear spin in a silicon single electron transistor Appl. Phys. Lett. 101, 072407 (2012) Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration J. Appl. Phys. 112, 034513 (2012) Additional information on J. Appl. Phys. The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional (3D) quantum mechanical simulation approach to treat various SNWTs within the effective-mass approximation. We begin by assuming ballistic transport, which gives the upper performance limit of the devices. The use of a mode space approach (either coupled or uncoupled) produces high computational efficiency that makes our 3D quantum simulator practical for extensive device simulation and design. Scattering in SNWTs is then treated by a simple model that uses so-called Büttiker probes, which was previously used in metal-oxide-semiconductor field effect transistor simulations. Using this simple approach, the effects of scattering on both internal device characteristics and terminal currents can be examined, which enables our simulator to be used for the exploration of realistic performance limits of SNWTs.

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Section: Introductionmentioning

confidence: 99%

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Wang

Polizzi

Lundstrom

2004

Journal of Applied Physics

347

237

View full text Add to dashboard Cite

show abstract

“…Prominent examples include fully depleted silicon on insulator ͑SOI͒ metal-oxidesemiconductor field-effect transistors ͑MOSFETs͒ realized on ultrathin silicon films ͑with thicknesses below 5 nm͒, [4][5][6][7] which are credible device architectures for the sub-50 nm CMOS technologies 8,9 as well as silicon nanowire transistors ͑SNWT͒, which are promising candidates for the ultimate CMOS downscaling. [10][11][12][13][14] In these SOI MOS and nanowire transistors the electron gas is forced to form a quasi-two-dimensional ͑2D͒ or a quasi-one-dimensional ͑1D͒ system in the semiconductor because of the very large confining potential energy produced by the oxide ͑about 3 eV for the case of the SiO 2 -Si system͒, but the electrons within the 2D or the 1D subbands can reach several hundreds of meV, so that a realistic description of the energy dispersion in the quantized system is an essential ingredient for any physically based transport model.…”

Section: Introductionmentioning

confidence: 99%

Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices

Esseni

Palestri

2005

Phys. Rev. B

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This paper concerns the determination of the band structure of physical systems with reduced dimensionality with the method of the linear combination of bulk band (LCBB), according to the full-band energy dispersion of the underlying crystal. The derivation of the eigenvalue equation is reconsidered in detail for quasi-two-dimensional (2D) and quasi-one-dimensional (1D) systems and we demonstrate how the choice of the volume expansion in the three-dimensional reciprocal lattice space is important in order to obtain a separated eigenvalue problem for each wave vector in the unconstrained plane (for 2D systems) or in the unconstrained direction (for 1D systems). The clarification of the expansion volume naturally leads to identification of the 2D and 1D first Brillouin zone (BZ) for any quantization direction. We then apply the LCBB approach to the silicon and germanium inversion layers and illustrate the main features of the energy dispersion and the 2D first BZ for the [001], [110], and [111] quantization directions. We further compare the LCBB energy dispersion with the one obtained with the conventional effective mass approximation (EMA) in the case of (001) silicon inversion layers. As an interesting result, we show that the LCBB method reveals a valley at the edge of the 2D first BZ which is not considered by the EMA model and that gives a significant contribution to the 2D density of states

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“…[5][6][7] Despite the nature of the gate, all of these geometries share a common characteristic-they are composed of a thin silicon body sandwiched between insulators and coupled to large source/drain ͑S/D͒ reservoirs. One such device, a double gate ͑DG͒, silicon-on-insulator ͑SOI͒ transistor, is illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors

Venugopal

Goasguen

Datta

et al. 2004

Journal of Applied Physics

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A simple quantum mechanical treatment of scattering in nanoscale transistorsWe apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green's function equations self-consistently with Poisson's equation and treats the effect of scattering using a simple approximation inspired by Büttiker. It is based on an expansion of the device Hamiltonian in coupled mode space. Simulation results are used to highlight quantum effects and discuss the importance of scattering when examining the transport properties of nanoscale transistors with differing channel access geometries. Additionally, an efficient domain decomposition scheme for evaluating the performance of nanoscale transistors is also presented. This article highlights the importance of scattering in understanding the performance of transistors with different channel access geometries.

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A silicon quantum wire transistor with one-dimensional subband effects

Cited by 38 publications

References 9 publications

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices

Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors

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